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STPS10L45CG-TR

STMicroelectronics

STPS10L45CG-TR by STMicroelectronics

STPS10L45CG-TR by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.46 V, supports up to 5 A output current, and has a peak reverse voltage of 45 V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,723 parts In-Stock

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Vyrian

USA . 3,186 parts In-Stock

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3,186

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Anansix

USA . 427 parts In-Stock

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427

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IDEA Electronic Components Group

UK . 1,759 parts In-Stock

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$0.135

100+ parts

-

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$0.122

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1,759

$0.135

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$0.122

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MKK Technologies

India . 1,392 parts In-Stock

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$0.254

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1,392

$0.254

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DigiPath Technology Company

USA . 1,392 parts In-Stock

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$0.254

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1,392

$0.254

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AZTECH Wire

Italy . 104 parts In-Stock

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$19.390

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104

$19.390

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QUARKTWIN TECHNOLOGY LTD

USA . 24,574 parts In-Stock

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24,574

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Parana Technologies

USA . 1,585 parts In-Stock

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$0.162

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1,585

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$0.162

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Corphita

USA . 1,024 parts In-Stock

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1,024

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Overview

Elevate your power management solutions with the STPS10L45CG-TR from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a robust Schottky rectifier ideal for efficient energy conversion in compact applications. With its low forward voltage drop and high current capability, this diode enhances performance while saving space, making it perfect for consumer electronics, automotive systems, and industrial devices. Experience reliability and excellence with STMicroelectronics, empowering your designs to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to various environmental factors, making this diode reliable in different applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simplified circuit design, making it easier to integrate into various power management systems.

Surface Mount: YES

Surface mount technology enables compact designs and automatic assembly, optimizing board space and production efficiency.

Package Shape: RECTANGULAR

The rectangular package shape provides effective space utilization on printed circuit boards, fitting well into typical layout designs.

No. of Terminals: 2

With only two terminals, this diode simplifies the connection process and reduces potential points of failure in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a reduced footprint, allowing for high-density assembly of components on the board.

Application: POWER

Designed specifically for power applications, this diode can handle high currents and voltages, making it ideal for a wide range of power management needs.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and minimizes the risk of tin whiskers, ensuring reliable connections over time.

Terminal Position: SINGLE

A single terminal position simplifies the design, avoids confusion during installation, and helps maintain integrity in wiring.

Case Connection: CATHODE

With a cathode case connection, this diode effectively reduces reverse leakage current, enhancing performance and efficiency.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is essential for converting alternating current (AC) to direct current (DC), making it critical in power supply applications.

Maximum Forward Voltage (VF): 0.46 V

A low maximum forward voltage ensures minimal energy loss during operation, increasing overall system efficiency.

Maximum Output Current: 5 A

This diode's capacity to handle up to 5 A of output current ensures it can support high-power applications without overheating.

Technology: SCHOTTKY

Schottky technology provides faster switching speeds and lower forward voltage drop, making it more efficient than standard diodes.

Terminal Form: GULL WING

Gull wing terminal form offers better mechanical strength and is easier to solder, improving manufacturing reliability.

No. of Elements: 2

Having two elements allows for greater flexibility in circuit design and improves current handling capabilities.

Maximum Repetitive Peak Reverse Voltage: 45 V

A high maximum repetitive peak reverse voltage rating permits use in voltage-sensitive applications, reducing the risk of breakdown.

Maximum Non Repetitive Peak Forward Current: 150 A

The ability to handle significant non-repetitive peak forward current provides robustness during transient conditions, enhancing reliability.

Diode Element Material: SILICON

Silicon as the diode element material delivers excellent electrical properties and stability, suitable for a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers STPS10L45CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREEWHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.46 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS10L45CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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