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STPS10H100CG

STMicroelectronics

STPS10H100CG by STMicroelectronics

STPS10H100CG by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max repetitive peak reverse voltage of 100V, forward current of 5A, and operates at a peak reflow temp of 245 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

$1.163

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,000 parts In-Stock

1+ parts

$1.163

100+ parts

$0.430

1k+ parts

$0.302

10k+ parts

-

1,000

$1.163

$0.430

$0.302

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Vyrian

USA . 8,468 parts In-Stock

1+ parts

-

100+ parts

-

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8,468

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Chip Stock

USA . 6,500 parts In-Stock

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6,500

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Digiode

USA . 3,609 parts In-Stock

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3,609

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Anansix

USA . 1,838 parts In-Stock

1+ parts

-

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1,838

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Lakeland Logistics Inc

USA . 1,000 parts In-Stock

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1,000

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Microfarads

USA . 964 parts In-Stock

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964

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Ashlea Components Ltd

UK . 935 parts In-Stock

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935

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Zilex Electronics Inc.

Canada . 550 parts In-Stock

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550

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LIBRA Elektronik GmbH

Germany . 374 parts In-Stock

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374

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 421 parts In-Stock

1+ parts

$0.159

100+ parts

-

1k+ parts

$0.143

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421

$0.159

-

$0.143

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MKK Technologies

India . 798 parts In-Stock

1+ parts

$0.299

100+ parts

-

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798

$0.299

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DigiPath Technology Company

USA . 798 parts In-Stock

1+ parts

$0.299

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798

$0.299

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AZTECH Wire

Italy . 965 parts In-Stock

1+ parts

$13.620

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965

$13.620

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Component Stockers USA

USA . 251 parts In-Stock

1+ parts

$99.990

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251

$99.990

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Kepictronics

USA . 81,000 parts In-Stock

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81,000

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Corphita

USA . 2,668 parts In-Stock

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2,668

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GreenTree Electronics

Israel . 585 parts In-Stock

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585

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Parana Technologies

USA . 53 parts In-Stock

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$0.190

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53

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$0.190

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Overview

Unlock unparalleled performance with the STPS10H100CG Schottky rectifier diode from STMicroelectronics, a leader in semiconductor innovation. Its robust design ensures efficient energy conversion, making it ideal for high-voltage power applications. With exceptional thermal management and reliability, this diode not only enhances system efficiency but also extends device lifespan, delivering real value to engineers and designers seeking quality and dependability. Elevate your projects with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent protection against environmental factors and ensures durability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simplified circuitry in applications, making integration easier in power management systems.

Surface Mount: YES

Surface mount capability enhances ease of assembly in automated processes, ultimately reducing manufacturing costs and space.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization on PCBs, facilitating compact designs.

No. of Terminals: 2

With 2 terminals, this device is straightforward to integrate into various circuits, simplifying design and assembly.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for applications where board space is at a premium, allowing for higher-density designs.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this product ensures reliability in demanding environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and resistance to oxidation, enhancing longevity and performance of connections.

Terminal Position: SINGLE

The single terminal position allows for straightforward connections in circuit designs, contributing to reduced assembly complexity.

Case Connection: CATHODE

The cathode case connection simplifies the circuit layout and reduces the risk of misconnection in high-power applications.

Maximum Time At Peak Reflow Temperature: 30 s

The tolerance for a maximum of 30 seconds at peak reflow temperature enhances reliability during soldering processes.

Peak Reflow Temperature: 245 C

With a peak reflow temperature of 245 °C, this diode can endure typical soldering processes without degrading or losing functionality.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is essential for converting AC to DC, making it a fundamental component in power supplies.

Maximum Forward Voltage (VF): 0.85 V

The low maximum forward voltage (0.85 V) results in lower power losses, which increases overall efficiency in power conversion.

Maximum Output Current: 5 A

Capable of handling up to 5 A of output current, this diode is suitable for a wide range of power applications.

Technology: SCHOTTKY

Utilizing Schottky technology provides fast switching characteristics and low forward voltage drop, suitable for high efficiency applications.

Terminal Form: GULL WING

The gull wing terminal form ensures stable and reliable solder joints, enhancing performance and durability.

No. of Elements: 2

Having 2 elements allows for dual functionality in space-efficient solutions, ideal for compact electronic designs.

Maximum Repetitive Peak Reverse Voltage: 100 V

A maximum repetitive peak reverse voltage rating of 100 V allows this diode to be used in high-voltage applications safely.

Maximum Non-Repetitive Peak Forward Current: 180 A

The ability to handle up to 180 A of non-repetitive peak forward current provides robustness against surges, making it suitable for dynamic environments.

Diode Element Material: SILICON

Made with silicon, this diode ensures reliable performance, thermal stability, and compatibility with a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS10H100CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS10H100CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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