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STPS10170CR

STMicroelectronics

STPS10170CR by STMicroelectronics

STPS10170CR by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max output current of 5 A, a peak reverse voltage of 170 V, and a low forward voltage drop of 0.75 V. Its flange mount design ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,118 parts In-Stock

1+ parts

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4,118

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Vyrian

USA . 2,841 parts In-Stock

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2,841

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Anansix

USA . 471 parts In-Stock

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471

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,228 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

$0.064

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1,228

$0.071

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$0.064

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MKK Technologies

India . 785 parts In-Stock

1+ parts

$0.133

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785

$0.133

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DigiPath Technology Company

USA . 785 parts In-Stock

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$0.133

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785

$0.133

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AZTECH Wire

Italy . 1,129 parts In-Stock

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$16.800

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1,129

$16.800

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Corphita

USA . 3,888 parts In-Stock

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3,888

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Parana Technologies

USA . 910 parts In-Stock

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$0.085

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910

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$0.085

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Overview

Elevate your high-voltage power applications with the STPS10170CR from STMicroelectronics—where quality meets performance. Renowned for its reliability, STMicroelectronics ensures this Schottky rectifier diode delivers superior efficiency and durability, making it ideal for demanding environments. With a robust design and impressive output capabilities, it not only enhances circuit functionality but also provides outstanding value, ensuring your projects run smoother and longer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and enhances thermal performance, making it suitable for high voltage applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for an efficient design in circuits requiring multiple diodes, improving versatility in various applications.

Package Shape: RECTANGULAR

The rectangular shape aids in optimized layout and integration on PCBs, facilitating space-efficient designs.

No. of Terminals: 3

Having three terminals allows for more connection options and simplifies the design process in circuit integration.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides secure mounting options, enhancing stability in high vibration environments.

Application: HIGH VOLTAGE POWER

Designed for high voltage applications, this diode ensures reliability under demanding conditions, making it an excellent choice for power management.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term performance and reliability.

Terminal Position: SINGLE

A single terminal position simplifies PCB layout and connection processes, resulting in increased design efficiency.

Case Connection: CATHODE

A cathode connection provides effective integration in power circuits, enhancing performance for rectification tasks.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.75 V

The low forward voltage drop (0.75 V) minimizes energy loss, improving overall power efficiency during operation.

Maximum Output Current: 5 A

With a maximum output current of 5 A, this diode can handle substantial current loads effectively, suitable for power applications.

Technology: SCHOTTKY

Using Schottky technology provides faster switching speeds and lower forward voltage drops, making it ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals enhance mechanical strength and reliability in high-stress environments, ensuring solid connections.

No. of Elements: 2

Having two elements allows for more compact designs while offering redundancy, which can enhance circuit reliability.

Maximum Repetitive Peak Reverse Voltage: 170 V

With a maximum repetitive peak reverse voltage of 170 V, this diode can withstand significant voltage stress, ensuring safe operation in high voltage applications.

Maximum Non-Repetitive Peak Forward Current: 75 A

The ability to handle non-repetitive peak forward currents of 75 A makes this diode robust against current surges, protecting circuit integrity.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties, enabling reliable performance under various operating conditions.

Technical Specifications

Diodes & Rectifiers STPS10170CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS10170CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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