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STPS10170CG

STMicroelectronics

STPS10170CG by STMicroelectronics

STPS10170CG by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max forward voltage of 0.75V, supports up to 5A output current, and has a peak reverse voltage of 170V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,494 parts In-Stock

1+ parts

-

100+ parts

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4,494

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Digiode

USA . 3,649 parts In-Stock

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3,649

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Anansix

USA . 162 parts In-Stock

1+ parts

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162

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 931 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

$0.139

10k+ parts

-

931

$0.155

-

$0.139

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MKK Technologies

India . 1,799 parts In-Stock

1+ parts

$0.291

100+ parts

-

1k+ parts

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10k+ parts

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1,799

$0.291

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DigiPath Technology Company

USA . 1,799 parts In-Stock

1+ parts

$0.291

100+ parts

-

1k+ parts

-

10k+ parts

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1,799

$0.291

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AZTECH Wire

Italy . 568 parts In-Stock

1+ parts

$19.170

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568

$19.170

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Corphita

USA . 971 parts In-Stock

1+ parts

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971

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Parana Technologies

USA . 300 parts In-Stock

1+ parts

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100+ parts

$0.185

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300

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$0.185

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Overview

Unlock the power of efficiency with the STPS10170CG from STMicroelectronics! This high-performance Schottky rectifier diode is designed for high voltage applications, providing superior quality and reliability that STMicroelectronics is renowned for. Its compact surface mount design ensures easy integration into your projects, maximizing space without compromising on performance. Experience lower forward voltage drop and greater thermal stability, enhancing your system's overall effectiveness. Perfect for power conversion in industrial, automotive, and consumer electronics—choose the STPS10170CG for unmatched value and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration provides ease of integration in circuits requiring multiple diodes, enhancing design flexibility.

Surface Mount: YES

Surface mount capability allows for reduced footprint on PCBs, facilitating compact designs and improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on the circuit board, making layout design more straightforward.

No. of Terminals: 2

Having two terminals simplifies connections, contributing to a more straightforward circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space requirements on the PCB, enabling more components to fit into limited spaces.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this diode is ideal for reliable performance in demanding environments.

Terminal Finish: MATTE TIN

The matte tin finish offers good solderability and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: SINGLE

A single terminal position simplifies connections, reducing complexity in circuit design and assembly.

Case Connection: CATHODE

A cathode connection provides stable performance in rectification applications, ensuring enhanced electrical characteristics.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is efficient in converting AC to DC, ideal for power supply applications.

Maximum Forward Voltage (VF): 0.75 V

The low forward voltage drop improves overall efficiency of the circuit by minimizing energy loss during operation.

Maximum Output Current: 5 A

With a maximum output current of 5 A, this diode can handle significant loads, making it suitable for high power applications.

Technology: SCHOTTKY

Schottky technology enables faster switching speeds and lower voltage drops, enhancing performance in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and ease of soldering, ensuring robust connections on the PCB.

No. of Elements: 2

With two elements, this diode configuration offers enhanced performance and reliability in rectifying applications.

Maximum Repetitive Peak Reverse Voltage: 170 V

A high peak reverse voltage rating ensures reliability and safety in high-voltage applications, protecting against breakdown.

Maximum Non Repetitive Peak Forward Current: 75 A

The ability to handle a high non-repetitive peak forward current demonstrates robustness and reliability under surge conditions.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical performance and reliability, making it a standard for rectifier applications.

Technical Specifications

Diodes & Rectifiers STPS10170CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS10170CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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