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STPS10170CB

STMicroelectronics

STPS10170CB by STMicroelectronics

STPS10170CB by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max repetitive peak reverse voltage of 170 V, a forward current of 5 A, and comes in a compact surface mount package. Ideal for efficient power management in electronic circuits.

Median Price

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Lifecycle Status

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7

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1k+

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Chip Stock

USA . 16,517 parts In-Stock

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Vyrian

USA . 5,143 parts In-Stock

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Anansix

USA . 1,509 parts In-Stock

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Digiode

USA . 450 parts In-Stock

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450

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A&K Electronics

USA . 100 parts In-Stock

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100

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Rotakorn

Sweden . 100 parts In-Stock

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100

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Bristol Electronics

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 672 parts In-Stock

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$0.160

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$0.144

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672

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$0.144

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MKK Technologies

India . 176 parts In-Stock

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$0.301

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DigiPath Technology Company

USA . 176 parts In-Stock

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AZTECH Wire

Italy . 544 parts In-Stock

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$17.340

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Component Stockers USA

USA . 665 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 26,208 parts In-Stock

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Corphita

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Parana Technologies

USA . 411 parts In-Stock

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Overview

Unlock unparalleled performance with the STPS10170CB from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This high-voltage Schottky rectifier diode is designed for efficiency and reliability, making it the perfect choice for power applications. Experience significant improvements in energy savings and operational stability, ensuring your projects thrive while benefiting from STMicroelectronics' commitment to quality and innovation. Elevate your designs effortlessly!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy strengthens the diode's durability and resistance to environmental factors.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration enhances versatility, allowing for easier integration into various circuit designs.

Surface Mount: YES

Surface mount capability allows for space-saving designs and easier automated assembly.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient placement on PCBs and optimizes thermal performance.

No. of Terminals: 2

Having two terminals simplifies connections in circuit designs, reducing complexity.

Package Style (Meter): SMALL OUTLINE

A small outline package promotes miniaturization in electronic devices.

Application: HIGH VOLTAGE POWER

Designed for high voltage applications, this diode effectively handles substantial electrical loads.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position allows for easy installation and reduces the risk of misalignment during assembly.

Case Connection: CATHODE

The cathode connection indicates compatibility with specific circuit designs, enhancing usability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it ideal for power applications.

Maximum Forward Voltage (VF): 0.75 V

A low forward voltage drop improves energy efficiency, reducing power losses in the circuit.

Maximum Output Current: 5 A

Capable of handling 5 A, this diode supports a wide range of applications, ensuring effective performance.

Technology: SCHOTTKY

Schottky technology decreases switching losses and enhances frequency performance, ideal for fast applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical support and ease of soldering, ensuring reliable connections.

No. of Elements: 2

With two elements, this diode can manage higher performance requirements and improve thermal management.

Maximum Repetitive Peak Reverse Voltage: 170 V

A high reverse voltage rating enables safe operation in demanding environments, preventing breakdown.

Maximum Non Repetitive Peak Forward Current: 75 A

The capability to handle a peak current of 75 A allows for robustness in surge conditions, protecting circuits.

Diode Element Material: SILICON

Silicon provides excellent conductivity and temperature stability, enhancing overall diode performance.

Technical Specifications

Diodes & Rectifiers STPS10170CB attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS10170CB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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