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STPS10150CG

STMicroelectronics

STPS10150CG by STMicroelectronics

STPS10150CG by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max repetitive peak reverse voltage of 150 V, forward current of 5 A, and operates at a peak reflow temp of 245 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

$0.422

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,363 parts In-Stock

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Anansix

USA . 2,653 parts In-Stock

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2,653

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Bristol Electronics

USA . 2,448 parts In-Stock

1+ parts

-

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$0.422

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$0.315

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$0.292

2,448

-

$0.422

$0.315

$0.292

Dan-Mar Components

USA . 2,448 parts In-Stock

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2,448

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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Digiode

USA . 908 parts In-Stock

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LWI Electronics Inc

India . 20 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,337 parts In-Stock

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$0.102

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-

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$0.092

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2,337

$0.102

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$0.092

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MKK Technologies

India . 736 parts In-Stock

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$0.192

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736

$0.192

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DigiPath Technology Company

USA . 736 parts In-Stock

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$0.192

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736

$0.192

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AZTECH Wire

Italy . 943 parts In-Stock

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$19.160

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943

$19.160

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Component Stockers USA

USA . 228 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 11,514 parts In-Stock

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RC Electronics

USA . 9,000 parts In-Stock

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Kepictronics

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Amble Industries

USA . 925 parts In-Stock

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Metaverse IC Inc.

Canada . 465 parts In-Stock

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Corphita

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Parana Technologies

USA . 38 parts In-Stock

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$0.122

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Overview

Unlock high performance and reliability with the STPS10150CG Schottky rectifier from STMicroelectronics! Renowned for their commitment to quality, STMicroelectronics delivers a diode that excels in high-voltage power applications. With a compact design and superior thermal efficiency, this rectifier ensures optimal energy management, reducing operational costs while enhancing system durability. Elevate your projects with a trusted solution that maximizes performance and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures reliability and protection against environmental factors, making it suitable for adverse conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and allows for efficient integration in various applications.

Surface Mount: YES

Being a surface mount device (SMD) enables easy assembly and minimizes space on PCBs, ideal for compact designs.

Package Shape: RECTANGULAR

The rectangular package shape maximizes board space efficiency and allows for simple placement in circuit layouts.

No. of Terminals: 2

With only two terminals, this diode simplifies connections and contributes to a lower overall PCB design complexity.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density component layout, making it suitable for miniaturized electronic devices.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this diode can handle demanding electrical conditions, ensuring stable performance.

Terminal Finish: Bright Tin (Sn) - annealed

The bright tin finish provides good solderability and corrosion resistance, enhancing the longevity of the device.

Terminal Position: SINGLE

A single terminal position facilitates straightforward and uncomplicated PCB layouts, improving assembly efficiency.

Case Connection: CATHODE

The cathode case connection ensures consistent performance and easier integration into circuits that require specific orientation.

Maximum Time At Peak Reflow Temperature: 30s

This maximum time limit at peak reflow temperature indicates the diode's ability to withstand soldering conditions without compromising integrity.

Peak Reflow Temperature: 245 °C

A high peak reflow temperature enhances compatibility with various soldering processes, allowing for better assembly process flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting AC to DC, making it essential in power supply and rectification circuits.

Maximum Forward Voltage (VF): 0.75 V

A low forward voltage drop ensures high efficiency and minimal power loss during operation, boosting overall system effectiveness.

Maximum Output Current: 5 A

Supporting a maximum output current of 5 A makes this diode a robust choice for handling substantial loads in various applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and lower forward voltage, improving performance in high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical strength and provides excellent soldering characteristics, ensuring secure connections.

No. of Elements: 2

Two elements indicate versatility and enable handling multiple current paths, which is advantageous in parallel configurations.

Maximum Repetitive Peak Reverse Voltage: 150 V

With a maximum repetitive peak reverse voltage of 150 V, this diode can safely manage high voltage fluctuations, ensuring reliability.

Maximum Non Repetitive Peak Forward Current: 120 A

The high maximum non-repetitive peak forward current rating boosts the diode's capability to handle transient conditions without failure.

Diode Element Material: SILICON

Made from silicon, this diode offers excellent thermal stability and robustness, making it suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers STPS10150CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Bright Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS10150CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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