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STGD7NB120ST4

STMicroelectronics

STGD7NB120ST4 by STMicroelectronics

STGD7NB120ST4 by STMicroelectronics is a PowerMESH™ IGBT with 1200V breakdown voltage, 10A max collector current, and 55W power rating. Ideal for high-power applications requiring efficient switching capabilities in surface mount configurations.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

STGD7NB120ST4 by STMicroelectronics
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Vyrian

USA . 4,122 parts In-Stock

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Anansix

USA . 2,148 parts In-Stock

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Digiode

USA . 116 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 249 parts In-Stock

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$8.670

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249

$8.670

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Component Stockers USA

USA . 658 parts In-Stock

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$99.990

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658

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Corphita

USA . 2,709 parts In-Stock

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MKK Technologies

India . 1,706 parts In-Stock

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DigiPath Technology Company

USA . 1,706 parts In-Stock

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Parana Technologies

USA . 1,179 parts In-Stock

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IDEA Electronic Components Group

UK . 1,034 parts In-Stock

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Overview

Enhance your electronic projects with the STGD7NB120ST4 by STMicroelectronics, a top-tier manufacturer known for its quality components. As a part of the PowerMESH™ series, this single IGBT transistor offers a voltage breakdown of 1200V and a maximum collector current of 10A, making it ideal for high-power applications. With low switching energy and a compact surface mount package, this transistor delivers efficiency and reliability. Upgrade your designs with the STGD7NB120ST4 and experience enhanced performance and longevity in your projects.

Feature Benefit Bullets

Voltage - Collector Emitter Breakdown (Max): 1200 V

High voltage breakdown provides greater protection against voltage spikes and ensures reliable operation in high voltage applications.

Current - Collector (Ic) (Max): 10 A

High current handling capability allows for efficient power handling and operation in demanding conditions.

Power - Max: 55 W

High power rating enables the component to handle high power dissipation, making it suitable for power-intensive applications.

Gate Charge: 29 nC

Low gate charge results in faster switching speeds, reducing power losses and improving overall efficiency of the component.

Mounting Type: Surface Mount

Surface mount package allows for easy and convenient integration onto PCBs, saving space and simplifying assembly processes.

Technical Specifications

Additional Parts STGD7NB120ST4 attributes and parameters. Explore more Additional Parts devices from STMicroelectronics

Technical Specifications

Input Type:

Standard

Test Condition:

960V, 7A, 1kOhm, 15V

Category:

Discrete Semiconductor Products
Transistors IGBTs Single IGBTs

Switching Energy:

3.2µJ (on), 15mJ (off)

Current - Collector (Ic) (Max):

10 A

Mounting Type:

Surface Mount

Voltage - Collector Emitter Breakdown (Max):

1200 V

Td (on/off) @ 25°C:

570ns/-

Supplier Device Package:

DPAK

Standard Package:

2,500

Current - Collector Pulsed (Icm):

20 A

Series:

PowerMESH™

Vce(on) (Max) @ Vge, Ic:

2.1V @ 15V, 7A

Gate Charge:

29 nC

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Power - Max:

55 W

Packaging:

Tape & Reel (TR)

Base Product Number:

STGD7

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

STGD7NB120ST4 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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