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STD1HNC60T4

STMicroelectronics

STD1HNC60T4 by STMicroelectronics

STD1HNC60T4 by STMicroelectronics is a N-Channel MOSFET with 600V Vdss, 2A Id, and 10V Drive Voltage. It belongs to the PowerMESH™ II series and is suitable for applications requiring high power dissipation up to 50W at 150 °C. The device comes in DPAK package for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Semi Source

USA . 10,000 parts In-Stock

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Vyrian

USA . 5,952 parts In-Stock

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Digiode

USA . 2,896 parts In-Stock

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Anansix

USA . 335 parts In-Stock

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AZTECH Wire

Italy . 422 parts In-Stock

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$11.660

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Kepictronics

USA . 48,500 parts In-Stock

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48,500

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Corphita

USA . 4,827 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,537 parts In-Stock

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Parana Technologies

USA . 2,170 parts In-Stock

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MKK Technologies

India . 812 parts In-Stock

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DigiPath Technology Company

USA . 812 parts In-Stock

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IDEA Electronic Components Group

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Overview

Experience the superior quality of STMicroelectronics with the STD1HNC60T4, a top-of-the-line N-Channel MOSFET transistor from the PowerMESH™ II series. Ideal for a wide range of applications in the electronics industry, this product offers unmatched performance and reliability. With a maximum drain to source voltage of 600V and a continuous drain current of 2A, this transistor is designed to handle high-power applications with ease. Trust STMicroelectronics for the best-in-class components that deliver exceptional value and benefits to customers looking for top-notch solutions in discrete semiconductor products.

Feature Benefit Bullets

Other Names: 497-2485-1

Unique identifier for the product making it easy to identify and order.

Standard Package: 2,500

Comes in a standard package size of 2,500 units, suitable for bulk orders or manufacturing purposes.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Belongs to a well-defined category of high-quality discrete semiconductor components.

Series: PowerMESH™ II

Part of the PowerMESH™ II series known for its efficiency and performance.

Technology: MOSFET (Metal Oxide)

Uses MOSFET technology which provides high efficiency and fast switching capabilities.

Drain to Source Voltage (Vdss): 600 V

Suitable for applications requiring high voltage handling capabilities.

Current - Continuous Drain (Id) @ 25 °C: 2A (Tc)

Capable of handling a continuous drain current of 2A, ideal for various power applications.

Drive Voltage (Max Rds On, Min Rds On): 10V

Works efficiently with a drive voltage of up to 10V, providing stable operation.

Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V

Low on-resistance of 5Ohm, ensuring minimal power loss and high efficiency.

Vgs(th) (Max) @ Id: 4V @ 250µA

Threshold gate-source voltage of 4V ensures reliable switching performance.

Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V

Low gate charge of 15.5 nC at 10V ensures quick switching speeds.

Vgs (Max): ±30V

Wide gate-source voltage range of ±30V for flexibility in different applications.

Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 25 V

Low input capacitance of 228pF at 25V allows for faster response times.

Power Dissipation (Max): 50W (Tc)

High power dissipation capacity of 50W ensures reliable performance under demanding conditions.

Operating Temperature: 150 °C (TJ)

Can operate at a wide temperature range of up to 150 °C, suitable for harsh environments.

Mounting Type: Surface Mount

Surface mount type for easy installation and space-saving design.

Supplier Device Package: DPAK

Comes in a DPAK package which is known for its thermal performance and reliability.

Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Standard package with 2 leads and a tab for secure mounting and connection.

Base Product Number: STD1HN

Base product number for reference and compatibility with other components.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

MSL level 1 indicating unlimited exposure time to moisture, ensuring long-term reliability.

Technical Specifications

Additional Parts STD1HNC60T4 attributes and parameters. Explore more Additional Parts devices from STMicroelectronics

Technical Specifications

Other Names:

497-2485-1
497-2485-2

Operating Temperature:

150°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

228 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

15.5 nC @ 10 V

Mounting Type:

Surface Mount

Rds On (Max) @ Id, Vgs:

5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Supplier Device Package:

DPAK

Standard Package:

2,500

Drain to Source Voltage (Vdss):

600 V

Series:

PowerMESH™ II

Power Dissipation (Max):

50W (Tc)

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Technology:

MOSFET (Metal Oxide)

Packaging:

Tape & Reel (TR)
Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C:

2A (Tc)

Vgs (Max):

±30V

Drive Voltage (Max Rds On, Min Rds On):

10V

Base Product Number:

STD1HN

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

STD1HNC60T4 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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