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SMA6J154CA-TR

STMicroelectronics

SMA6J154CA-TR by STMicroelectronics

SMA6J154CA-TR by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, breakdown voltage of 180 V, and operates from -55 °C to 175°C. This device is perfect for applications requiring robust surge protection in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,194 parts In-Stock

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Digiode

USA . 937 parts In-Stock

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Anansix

USA . 466 parts In-Stock

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466

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 410 parts In-Stock

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$0.061

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$0.055

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410

$0.061

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$0.055

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MKK Technologies

India . 1,828 parts In-Stock

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$0.114

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$0.114

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DigiPath Technology Company

USA . 1,828 parts In-Stock

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$0.114

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1,828

$0.114

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AZTECH Wire

Italy . 1,059 parts In-Stock

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$10.310

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$10.310

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 88,000 parts In-Stock

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Perfect Parts

USA . 21,552 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Parana Technologies

USA . 1,703 parts In-Stock

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$0.073

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1,703

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$0.073

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Corphita

USA . 1,296 parts In-Stock

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Overview

Elevate your designs with the SMA6J154CA-TR from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This robust transient suppression device ensures superior protection for sensitive electronics against voltage spikes, enhancing reliability and longevity. With its exceptional thermal performance and compact surface-mount package, it’s ideal for various applications, from automotive to consumer electronics. Experience peace of mind knowing you’re backed by a manufacturer renowned for quality and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent protection against environmental factors, ensuring durability and reliability.

Config: SINGLE

Single configuration simplifies integration into designs, making it an ideal choice for space-constrained applications.

Surface Mount: YES

Surface mount capability allows for efficient automated assembly and smaller circuit board designs, reducing overall footprint.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

A high power dissipation rating enables the device to handle large transient events without damage, enhancing circuit protection.

Nominal Breakdown Voltage: 180 V

The nominal breakdown voltage ensures reliable clamping during voltage spikes, protecting sensitive components downstream.

Package Shape: RECTANGULAR

Rectangular packaging promotes efficient space utilization on PCB layouts, facilitating compact designs.

No. of Terminals: 2

Having two terminals simplifies the connection process in most applications, making installation more straightforward.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to reduced weight and bulk, which is beneficial for portable devices.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance allows for use in demanding environments without risk of failure.

Minimum Operating Temperature: -55 °C

Wide operating temperature range supports applications in extreme conditions, making the device versatile and reliable.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish improves solderability and ensures good electrical connections, enhancing long-term reliability.

Terminal Position: DUAL

Dual terminal position eases PCB layout and helps in achieving better thermal dissipation.

Maximum Power Dissipation: 4 W

This power dissipation capability provides reliable operation in standard conditions, ensuring longevity and stability.

Minimum Breakdown Voltage: 171 V

A minimum breakdown voltage ensures that circuit components are protected under typical operational voltages.

Maximum Time At Peak Reflow Temperature (s): 10

Short peak reflow time ensures that the device can withstand typical manufacturing processes without damage.

Peak Reflow Temperature °C: 260

High reflow temperature capability supports compatibility with modern soldering processes, making integration easier.

Maximum Breakdown Voltage: 189 V

The maximum breakdown voltage offers a safety margin for voltage spikes, effectively safeguarding sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for transient voltage suppression, making it ideal for protecting sensitive electronics.

Technology: AVALANCHE

Avalanche technology ensures rapid response to over-voltage conditions, providing superior protection against transients.

Terminal Form: C BEND

The C bend terminal form aids in secure mounting and enhances electrical connectivity, ensuring stable performance.

Maximum Repetitive Peak Reverse Voltage: 154 V

This rating enables the device to withstand repetitive voltage spikes without degradation, ensuring consistent reliability.

Polarity: BIDIRECTIONAL

Bidirectional functionality allows the device to protect against over-voltage in both polarities, increasing circuit safeguarding.

Maximum Clamping Voltage: 242 V

High clamping voltage capability makes this device suitable for high-voltage applications while ensuring safety.

Diode Element Material: SILICON

Silicon material offers excellent thermal stability and performance, providing long-lasting protection and response reliability.

Technical Specifications

Transient Suppression Devices SMA6J154CA-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

189 V

Minimum Breakdown Voltage:

171 V

Nominal Breakdown Voltage:

180 V

Maximum Clamping Voltage:

242 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

154 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SMA6J154CA-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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