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SMA6J130CA-TR

STMicroelectronics

SMA6J130CA-TR by STMicroelectronics

SMA6J130CA-TR by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, breakdown voltage range of 144-159 V, and operates b/w -55 °C to 175°C. This device is perfect for surface mount applications requiring robust surge protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

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15,000

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Chip Stock

USA . 5,820 parts In-Stock

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5,820

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Cyclops Electronics Ltd

UK . 5,000 parts In-Stock

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5,000

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Digiode

USA . 2,393 parts In-Stock

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Vyrian

USA . 2,332 parts In-Stock

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2,332

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Anansix

USA . 1,668 parts In-Stock

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1,668

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,342 parts In-Stock

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$0.113

100+ parts

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$0.102

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1,342

$0.113

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$0.102

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MKK Technologies

India . 245 parts In-Stock

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$0.213

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245

$0.213

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DigiPath Technology Company

USA . 245 parts In-Stock

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$0.213

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245

$0.213

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AZTECH Wire

Italy . 869 parts In-Stock

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$20.630

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869

$20.630

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Perfect Parts

USA . 64,120 parts In-Stock

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64,120

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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Corphita

USA . 3,561 parts In-Stock

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3,561

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Parana Technologies

USA . 1,696 parts In-Stock

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$0.135

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1,696

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$0.135

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Overview

Unlock unparalleled reliability with the SMA6J130CA-TR from STMicroelectronics! This exceptional transient suppression device ensures your circuits remain protected against voltage spikes, elevating the performance of your electronics. Crafted with precision and built to withstand extreme temperatures, it’s ideal for automotive, industrial, and telecom applications. Trust in STMicroelectronics’ legacy of innovation to deliver quality, efficiency, and value that keep your projects on the cutting edge. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliable protection against environmental stresses, enhancing product longevity.

Config: SINGLE

A single configuration simplifies integration into designs, making it user-friendly for engineers.

Surface Mount: YES

Surface mount capability allows for compact designs and easy automation in the manufacturing process.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

This high power dissipation capability provides robust performance in transient voltage suppression.

Nominal Breakdown Voltage: 152 V

This optimal breakdown voltage ensures effective clamping of voltage spikes at standard operating levels.

Package Shape: RECTANGULAR

The rectangular shape enables efficient use of PCB space, facilitating design flexibility.

No. of Terminals: 2

A simple two-terminal setup promotes ease of integration into various circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline design is suitable for compact applications, ideal for modern electronic devices.

Maximum Operating Temperature: 175 °C

This high temperature rating permits operation in challenging environments, improving reliability.

Minimum Operating Temperature: -55 °C

This low temperature tolerance ensures functionality in extreme conditions, enhancing application versatility.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term performance.

Terminal Position: DUAL

Dual terminal positioning allows for more flexibility in circuit layouts and easier connectivity.

Maximum Power Dissipation: 4 W

This power dissipation capability ensures reliable voltage clamping without overheating during operation.

Minimum Breakdown Voltage: 144 V

A lower breakdown voltage safeguard against transient spikes, ensuring protection in sensitive electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 10

The short reflow time minimizes thermal stress on the device, promoting a reliable solder joint quality.

Peak Reflow Temperature (°C): 260

This high peak temperature tolerance allows for compatibility with modern soldering processes.

Maximum Breakdown Voltage: 159 V

A robust maximum breakdown voltage reinforces its capability to handle voltage transients effectively.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a transient voltage suppressor diode makes it ideal for protecting sensitive electronic components.

Technology: AVALANCHE

Utilizing avalanche technology ensures rapid response to transient events, minimizing potential damage.

Terminal Form: C BEND

The C bend terminal form facilitates efficient mounting and enhances connection stability.

Maximum Repetitive Peak Reverse Voltage: 130 V

This specification offers a safety margin for repetitive voltage spikes, enhancing circuit reliability.

Polarity: BIDIRECTIONAL

Bidirectional clamping allows protection in both directions, making it versatile for various applications.

Maximum Clamping Voltage: 204 V

The high clamping voltage ensures that it effectively limits voltage spikes while maintaining safety.

Diode Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring reliable and consistent transient suppression.

Technical Specifications

Transient Suppression Devices SMA6J130CA-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

159 V

Minimum Breakdown Voltage:

144 V

Nominal Breakdown Voltage:

152 V

Maximum Clamping Voltage:

204 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

130 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SMA6J130CA-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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