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SMA6J130A-TR

STMicroelectronics

SMA6J130A-TR by STMicroelectronics

SMA6J130A-TR by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, breakdown voltage range of 144-159 V, and operates b/w -55 °C to 175°C. This device is perfect for applications requiring robust surge protection in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,570 parts In-Stock

1+ parts

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4,570

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Digiode

USA . 3,030 parts In-Stock

1+ parts

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3,030

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Anansix

USA . 926 parts In-Stock

1+ parts

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926

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,114 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

$0.075

10k+ parts

-

1,114

$0.084

-

$0.075

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MKK Technologies

India . 1,453 parts In-Stock

1+ parts

$0.157

100+ parts

-

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1,453

$0.157

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DigiPath Technology Company

USA . 1,453 parts In-Stock

1+ parts

$0.157

100+ parts

-

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1,453

$0.157

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Benley Electronics

USA . 3 parts In-Stock

1+ parts

$1.750

100+ parts

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3

$1.750

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AZTECH Wire

Italy . 1,021 parts In-Stock

1+ parts

$9.890

100+ parts

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1,021

$9.890

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 56,000 parts In-Stock

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56,000

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Perfect Parts

USA . 48,263 parts In-Stock

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48,263

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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A-Z Elektronik GmbH

Germany . 7,500 parts In-Stock

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7,500

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Corphita

USA . 2,420 parts In-Stock

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2,420

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Parana Technologies

USA . 1,398 parts In-Stock

1+ parts

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$0.100

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1,398

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$0.100

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Overview

Elevate your designs with the SMA6J130A-TR from STMicroelectronics, a trusted leader in innovative electronic solutions. This robust transient suppression device ensures exceptional reliability and performance, protecting sensitive components from voltage spikes across various applications—from consumer electronics to industrial systems. With its superior heat resistance and compact profile, it delivers unmatched quality and peace of mind, making it an essential choice for engineers seeking durability and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The sturdy plastic/epoxy body material provides excellent durability and resistance to environmental factors, making this device ideal for various applications.

Config: SINGLE

A single configuration simplifies integration into circuits and enhances reliability by reducing the points of failure.

Surface Mount: YES

Surface mount capability allows for compact designs and efficient use of PCB space, making it suitable for modern electronic devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Ensures the device can handle significant power surges, protecting sensitive components from damage during transient events.

Nominal Breakdown Voltage: 152 V

A nominal breakdown voltage of 152 V ensures efficient suppression of overvoltage events, safeguarding circuitry.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement on PCBs and can enhance thermal performance.

No. of Terminals: 2

Having only two terminals simplifies connection in circuit designs and reduces the likelihood of wiring errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density applications, ideal for space-constrained designs.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows the device to function reliably in high-temperature environments, increasing design flexibility.

Minimum Operating Temperature: -55 °C

The capability to operate in low temperatures makes this device suitable for extreme environmental applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish enhances solderability, ensuring reliable connections during assembly.

Terminal Position: DUAL

Dual position terminals facilitate versatile mounting options and better integration into circuit layouts.

Maximum Power Dissipation: 4 W

With a maximum power dissipation of 4 W, this device can manage heat effectively, contributing to its longevity and reliability.

Minimum Breakdown Voltage: 144 V

The minimum breakdown voltage of 144 V provides a solid buffer against transient voltages, enhancing the protection of downstream components.

Maximum Time At Peak Reflow Temperature (s): 10

A peak reflow time of 10 seconds ensures compatibility with industry-standard soldering processes, simplifying manufacturing.

Peak Reflow Temperature °C: 260

The higher peak reflow temperature capability allows for effective soldering processes without damaging the component.

Maximum Breakdown Voltage: 159 V

A maximum breakdown voltage of 159 V offers reliable protection against voltage spikes, ensuring the integrity of the rest of the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device effectively protects circuits from voltage spikes, thus extending component life.

Technology: AVALANCHE

Utilizing avalanche technology ensures fast response times to voltage spikes, providing superior transient suppression performance.

Terminal Form: C BEND

C bend terminals allow for secure mounting and facilitate efficient heat dissipation during operation.

Maximum Repetitive Peak Reverse Voltage: 130 V

A maximum repetitive peak reverse voltage of 130 V provides a reliable level of protection against repetitive voltage transients.

Polarity: UNIDIRECTIONAL

Unidirectional polarity makes this device straightforward to integrate into circuits where overvoltage protection in one direction is sufficient.

Maximum Clamping Voltage: 204 V

With a maximum clamping voltage of 204 V, this product effectively limits voltage spikes to safe levels, enhancing circuit protection.

Diode Element Material: SILICON

Silicon as the diode element material ensures high performance, reliability, and efficiency in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMA6J130A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

159 V

Minimum Breakdown Voltage:

144 V

Nominal Breakdown Voltage:

152 V

Maximum Clamping Voltage:

204 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

130 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SMA6J130A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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