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SMA6J100A-TR

STMicroelectronics

SMA6J100A-TR by STMicroelectronics

SMA6J100A-TR by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust circuit protection. It features a max reverse power dissipation of 600 W, breakdown voltage range of 111-123 V, and operates b/w -55 °C to 175°C. Ideal for safeguarding sensitive electronics from voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT USA

USA . 10,000 parts In-Stock

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10,000

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Vyrian

USA . 7,329 parts In-Stock

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7,329

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LIBRA Elektronik GmbH

Germany . 4,394 parts In-Stock

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4,394

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Anansix

USA . 2,628 parts In-Stock

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2,628

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Digiode

USA . 280 parts In-Stock

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280

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 192 parts In-Stock

1+ parts

$0.182

100+ parts

-

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$0.164

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192

$0.182

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$0.164

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MKK Technologies

India . 2,255 parts In-Stock

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$0.343

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2,255

$0.343

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DigiPath Technology Company

USA . 2,255 parts In-Stock

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$0.343

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2,255

$0.343

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AZTECH Wire

Italy . 37 parts In-Stock

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$17.310

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37

$17.310

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Component Stockers USA

USA . 730 parts In-Stock

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$99.990

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730

$99.990

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Kepictronics

USA . 56,000 parts In-Stock

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Perfect Parts

USA . 31,886 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

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4,500

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Parana Technologies

USA . 1,587 parts In-Stock

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$0.218

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1,587

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$0.218

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Corphita

USA . 960 parts In-Stock

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960

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Overview

Unlock unparalleled protection for your electronic devices with the SMA6J100A-TR from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a state-of-the-art transient suppression device that shields against voltage spikes, ensuring reliability and longevity in various applications. With robust performance in extreme temperatures and compact design, this component guarantees peace of mind, letting you focus on what truly matters—your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this device reliable for long-term performance.

Config: SINGLE

A single configuration simplifies the design and integration in circuits, ideal for various applications with minimal complexity.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient space utilization on PCBs, making it suitable for modern electronics.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High non-repetitive power dissipation capability makes this device suitable for handling large transient events without breakdown.

Nominal Breakdown Voltage: 117 V

The nominal breakdown voltage of 117 V ensures effective protection for circuits operating around this voltage level.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy and efficient placement on PCBs, optimizing assembly processes.

No. of Terminals: 2

With only two terminals, this design simplifies the electrical connections and contributes to a compact footprint.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes board space requirements while allowing for high-density assembly.

Maximum Operating Temperature: 175 °C

The high operating temperature tolerance ensures reliability in demanding thermal environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows usage in extreme cold environments, broadening application scenarios.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish improves solderability, enhancing the reliability of connections during assembly.

Terminal Position: DUAL

The dual terminal position simplifies the connection and integration into various circuit designs.

Maximum Power Dissipation: 4 W

The specified power dissipation capability allows this device to safely manage thermal stresses under normal operating conditions.

Minimum Breakdown Voltage: 111 V

The minimum breakdown voltage provides a buffer for surge events, ensuring better protection for sensitive components.

Maximum Time At Peak Reflow Temperature (s): 10

A peak reflow time of 10 seconds ensures compatibility with standard soldering processes, facilitating easy manufacturing.

Peak Reflow Temperature: 260 °C

The ability to withstand high temperatures during reflow soldering ensures that the device remains functional after assembly.

Maximum Breakdown Voltage: 123 V

A maximum breakdown voltage of 123 V provides reliability by accommodating voltage spikes above the nominal level.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device specifically protects electronic components from voltage transients.

Technology: AVALANCHE

The avalanche technology facilitates rapid response to voltage spikes, thereby enhancing protection against transients.

Terminal Form: C BEND

The C bend terminal form aids in secure mounting and reliable electrical contact within the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

A maximum repetitive reverse voltage of 100 V makes this device suitable for a range of electronic applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies circuit design, making it easier to integrate into systems with specific voltage orientations.

Maximum Clamping Voltage: 157 V

The clamping voltage of 157 V is crucial for protecting components by limiting voltage spikes to safe levels.

Diode Element Material: SILICON

Silicon as the diode element material ensures high efficiency, reliability, and performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMA6J100A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

123 V

Minimum Breakdown Voltage:

111 V

Nominal Breakdown Voltage:

117 V

Maximum Clamping Voltage:

157 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SMA6J100A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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