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SM6HT27A

STMicroelectronics

SM6HT27A by STMicroelectronics

SM6HT27A by STMicroelectronics is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 27V breakdown voltage. It has a max clamping voltage of 37.5V and can dissipate up to 600W power. Ideal for transient suppression in electronic circuits, especially in applications requiring protection against voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 10,000 parts In-Stock

1+ parts

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10,000

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Digiode

USA . 4,732 parts In-Stock

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4,732

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Vyrian

USA . 4,151 parts In-Stock

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4,151

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Anansix

USA . 2,201 parts In-Stock

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2,201

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.103

100+ parts

$0.094

1k+ parts

$0.084

10k+ parts

-

20

$0.103

$0.094

$0.084

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IDEA Electronic Components Group

UK . 1,168 parts In-Stock

1+ parts

$0.104

100+ parts

-

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$0.094

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-

1,168

$0.104

-

$0.094

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MKK Technologies

India . 597 parts In-Stock

1+ parts

$0.195

100+ parts

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597

$0.195

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DigiPath Technology Company

USA . 597 parts In-Stock

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$0.195

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597

$0.195

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AZTECH Wire

Italy . 927 parts In-Stock

1+ parts

$14.790

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927

$14.790

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Kepictronics

USA . 99,800 parts In-Stock

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99,800

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Corphita

USA . 1,156 parts In-Stock

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1,156

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Parana Technologies

USA . 72 parts In-Stock

1+ parts

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$0.124

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72

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$0.124

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Perfect Parts

USA . 1 parts In-Stock

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1

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Overview

Protect your electronics with the reliable SM6HT27A by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality transient suppression devices like this one. Ideal for applications requiring voltage spike protection, this product offers customers peace of mind knowing their equipment is safeguarded. With a high power dissipation rating and a wide range of breakdown voltages, the SM6HT27A provides exceptional value and performance. Trust STMicroelectronics to protect your electronics effectively and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides a durable and lightweight package for the device, making it easier to handle and install.

Config: SINGLE

The single configuration simplifies the setup and operation of the device, making it easy to use for various applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum power dissipation capability, this device can effectively handle transient surges and protect the connected equipment.

Nominal Breakdown Voltage: 27 V

The nominal breakdown voltage of 27 V ensures reliable protection against voltage spikes and surges within its specified range.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient and space-saving placement on circuit boards, optimizing the layout of the overall system.

No. of Terminals: 2

Having 2 terminals simplifies the connection process, ensuring proper and secure electrical contact during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact design for the device, ideal for applications where space is limited.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and low-resistance contact surface, ensuring optimal performance and longevity of the device.

Terminal Position: DUAL

The dual terminal position facilitates easy and secure connection to the circuit, enhancing the reliability and efficiency of the device.

Maximum Power Dissipation: 6 W

With a high maximum power dissipation rating, this device can effectively handle power surges and protect the connected equipment from damage.

Minimum Breakdown Voltage: 25.7 V

The minimum breakdown voltage of 25.7 V ensures reliable protection against lower voltage spikes, offering a wider range of protection for various applications.

Maximum Breakdown Voltage: 28.4 V

The high maximum breakdown voltage of 28.4 V provides robust protection against higher voltage spikes, ensuring the safety and reliability of connected equipment.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures efficient and fast response to transient surges, effectively protecting sensitive electrical components.

Technology: AVALANCHE

The avalanche technology used in this device enables quick and reliable response to voltage spikes, offering superior protection and minimizing downtime.

Terminal Form: C BEND

The C bend terminal form provides a secure and stable connection to the circuit, reducing the risk of disconnection or damage during operation.

Maximum Repetitive Peak Reverse Voltage: 23.1 V

The high maximum repetitive peak reverse voltage ensures continuous protection against voltage spikes, maintaining the integrity of the connected equipment over time.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device protects against voltage spikes in one direction only, preventing reverse current flow and damage to the circuit.

Maximum Clamping Voltage: 37.5 V

With a maximum clamping voltage of 37.5 V, this device effectively limits the voltage level during transient surges, preventing damage to sensitive components.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high reliability and durability, ensuring long-lasting protection against transient surges for the connected equipment.

Technical Specifications

Transient Suppression Devices SM6HT27A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27 V

Maximum Clamping Voltage:

37.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

23.1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SM6HT27A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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