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SM2T14A

STMicroelectronics

SM2T14A by STMicroelectronics

SM2T14A by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 14V and max power dissipation of 2.5W. It features a compact square package for surface mounting, ideal for protecting sensitive electronics. With peak reverse power dissipation at 200W, it effectively safeguards circuits from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,228 parts In-Stock

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8,228

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ECAB

Sweden . 5,954 parts In-Stock

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5,954

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Anansix

USA . 798 parts In-Stock

1+ parts

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798

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Digiode

USA . 730 parts In-Stock

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730

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 975 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

$0.161

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975

$0.179

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$0.161

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MKK Technologies

India . 1,761 parts In-Stock

1+ parts

$0.337

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1,761

$0.337

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DigiPath Technology Company

USA . 1,761 parts In-Stock

1+ parts

$0.337

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1,761

$0.337

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AZTECH Wire

Italy . 876 parts In-Stock

1+ parts

$12.470

100+ parts

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876

$12.470

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Corphita

USA . 2,679 parts In-Stock

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2,679

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Parana Technologies

USA . 1,872 parts In-Stock

1+ parts

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$0.214

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1,872

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$0.214

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Overview

Safeguard your electronic designs with the SM2T14A from STMicroelectronics, a trusted name in cutting-edge technology. This robust transient suppression device ensures top-notch protection against voltage spikes, enhancing the reliability of your applications across diverse industries. With its compact design and superior performance, the SM2T14A not only shields your circuits but also simplifies integration, providing exceptional value and peace of mind for engineers and businesses alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and resistance to environmental factors, making this device reliable for various applications.

Config: SINGLE

A single configuration allows for easy integration in designs where space is limited and simplicity is desired.

Surface Mount: YES

Being surface mountable facilitates automated assembly processes, improving manufacturing efficiency and reducing cost.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

This high power dissipation capacity provides robust protection under transient conditions, ensuring reliability in demanding environments.

Nominal Breakdown Voltage: 14 V

An optimal breakdown voltage is crucial for effectively clamping voltage spikes and protecting sensitive components.

Package Shape: SQUARE

The square package shape allows for efficient use of PCB space, suitable for various compact electronic designs.

Package Style (Meter): SMALL OUTLINE

A small outline package style ensures compatibility with modern circuit board layouts and reduces overall footprint.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and improves the long-term reliability of electrical connections.

Terminal Position: SINGLE

Single terminal positioning simplifies PCB layout design and reduces complexity in circuit connections.

Case Connection: CATHODE

The cathode connection directly supports proper configuration for unidirectional applications, enhancing ease of use.

Maximum Power Dissipation: 2.5 W

This manageable power dissipation level makes it suitable for applications with stringent thermal management requirements.

Minimum Breakdown Voltage: 13.3 V

A minimum breakdown voltage ensures reliable performance in clamping unwanted voltage spikes effectively.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand peak temperatures for 30 seconds supports compatibility with standard reflow soldering processes.

Peak Reflow Temperature °C: 260

A high peak reflow temperature indicates the device can endure the heat generated during soldering, ensuring a robust connection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is specifically designed to protect circuits from voltage spikes, enhancing circuit longevity.

Technology: AVALANCHE

Avalanche technology ensures reliable operation under transient conditions, making it a suitable choice for safeguarding sensitive electronics.

Terminal Form: GULL WING

Gull wing terminal form is ideal for surface mount applications, allowing for good mechanical attachment and ease of soldering.

Polarity: UNIDIRECTIONAL

Unidirectional configuration simplifies circuit protection schemes and is well-suited for applications with a single voltage polarity.

Maximum Clamping Voltage: 19.9 V

A maximum clamping voltage of 19.9 V ensures effective protection against overvoltage events without compromising circuit functionality.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent thermal stability and electrical performance, leading to reliable operation.

Technical Specifications

Transient Suppression Devices SM2T14A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

19.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

1

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM2T14A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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