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SM15T75A

STMicroelectronics

SM15T75A by STMicroelectronics

SM15T75A by STMicroelectronics is a unidirectional transient voltage suppressor diode with a 75V breakdown voltage and 1500W peak reverse power dissipation. It operates in temperatures from -55 °C to 150 °C, ideal for protecting sensitive electronics. Its compact surface mount design ensures efficient space utilization in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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R&J Components

USA . 25,678 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,990 parts In-Stock

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Vyrian

USA . 5,551 parts In-Stock

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Digiode

USA . 4,890 parts In-Stock

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ECAB

Sweden . 2,949 parts In-Stock

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Anansix

USA . 1,975 parts In-Stock

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Cyclops Electronics Ltd

UK . 835 parts In-Stock

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IDEA Electronic Components Group

UK . 1,820 parts In-Stock

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$0.030

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$0.027

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MKK Technologies

India . 651 parts In-Stock

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$0.057

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651

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DigiPath Technology Company

USA . 651 parts In-Stock

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651

$0.057

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AZTECH Wire

Italy . 1,151 parts In-Stock

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$17.510

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Component Stockers USA

USA . 488 parts In-Stock

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Kepictronics

USA . 99,800 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 6,515 parts In-Stock

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Corphita

USA . 3,865 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,750 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 1,044 parts In-Stock

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$0.036

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Overview

Enhance the reliability of your electronic systems with the SM15T75A from STMicroelectronics, a trusted leader in semiconductor technology. This high-performance transient suppression device offers exceptional protection against voltage spikes, ensuring your circuits remain safe in demanding environments. Boasting a robust design and wide operational temperature range, the SM15T75A is ideal for automotive, industrial, and consumer applications. Experience peace of mind knowing your devices are shielded by quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

A single configuration simplifies the design and integration into circuits, making it easier to use in various transient suppression applications.

Surface Mount: YES

Surface mount technology allows for efficient space utilization on PCBs and enables automated assembly processes, improving manufacturing efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability protects circuits from transient voltage spikes, enhancing the reliability and longevity of electronic devices.

Nominal Breakdown Voltage: 75 V

With a nominal breakdown voltage of 75 V, this device effectively clamps voltage spikes within safe levels, preventing damage to sensitive components.

Package Shape: RECTANGULAR

The rectangular package shape optimizes layout design flexibility on circuit boards, ensuring efficient use of space.

No. of Terminals: 2

Having two terminals simplifies circuit connections and reduces potential points of failure in the design.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to compact circuit designs, making it ideal for space-constrained applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this device to function effectively in demanding environments without thermal failure.

Minimum Operating Temperature: -55 °C

The wide temperature range makes this device suitable for operation in extreme cold environments, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin provides good solderability and corrosion resistance, ensuring reliable connections over the lifespan of the device.

Terminal Position: DUAL

Dual terminal positions facilitate easy mounting and integration into circuits, allowing for smoother assembly processes.

Maximum Power Dissipation: 6.3 W

With a maximum power dissipation of 6.3 W, this device handles transients effectively without overheating, protecting downstream components.

Minimum Breakdown Voltage: 71.3 V

The minimum breakdown voltage ensures that the device will activate at a desirable voltage level, providing effective suppression of spikes.

Maximum Breakdown Voltage: 78.8 V

The maximum breakdown voltage defines the upper limit for effective clamping, enhancing protection for sensitive components.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies compliance with stringent safety standards, ensuring reliability and safety in critical applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Designed specifically for transient voltage suppression, this diode effectively protects circuit components from voltage surges.

Technology: AVALANCHE

Avalanche technology enables rapid response to transient events, ensuring timely protection in dynamic electrical environments.

Terminal Form: C BEND

The C bend terminal form allows for ease of placement and soldering on circuit boards, improving assembly efficiency.

Maximum Repetitive Peak Reverse Voltage: 64.1 V

This parameter indicates effective performance in protecting against repetitive voltage transients, ensuring long-term device reliability.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies the integration process in circuits where reverse voltage protection is required in one direction.

Maximum Clamping Voltage: 103 V

The maximum clamping voltage provides crucial protection by clamping high voltage transients to a level that safe for the components.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical characteristics and performance stability over varying temperatures.

Technical Specifications

Transient Suppression Devices SM15T75A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

78.8 V

Minimum Breakdown Voltage:

71.3 V

Nominal Breakdown Voltage:

75 V

Maximum Clamping Voltage:

103 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.3 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

64.1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SM15T75A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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