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RT922IYDT

STMicroelectronics

RT922IYDT by STMicroelectronics

RT922IYDT by STMicroelectronics is a dual operational amplifier designed for automotive applications. It features a max input offset voltage of 5000 µV, a nominal voltage of 3 V, and operates within -40 °C to 125 °C. Its compact size and high performance make it ideal for precision signal processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,242 parts In-Stock

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5,242

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Digiode

USA . 4,845 parts In-Stock

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4,845

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Anansix

USA . 1,909 parts In-Stock

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1,909

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,356 parts In-Stock

1+ parts

$1.093

100+ parts

-

1k+ parts

$0.984

10k+ parts

-

1,356

$1.093

-

$0.984

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MKK Technologies

India . 308 parts In-Stock

1+ parts

$2.055

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-

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308

$2.055

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DigiPath Technology Company

USA . 308 parts In-Stock

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$2.055

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308

$2.055

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Microchip USA

USA . 2,244 parts In-Stock

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$2.087

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2,244

$2.087

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AZTECH Wire

Italy . 1,178 parts In-Stock

1+ parts

$20.720

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1,178

$20.720

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Vigor

Singapore . 7,950 parts In-Stock

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7,950

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Corphita

USA . 4,518 parts In-Stock

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4,518

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Parana Technologies

USA . 1,931 parts In-Stock

1+ parts

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$1.307

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1,931

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$1.307

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Overview

Unlock unparalleled performance with the RT922IYDT from STMicroelectronics, a trusted leader in innovation. This high-quality operational amplifier is designed for diverse applications, ensuring robust functionality in automotive and industrial settings. With exceptional precision and low bias current, it delivers superior signal processing, enhancing your projects' reliability. Choose STMicroelectronics for cutting-edge technology that empowers your designs and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material contributes to the durability and lightweight nature of the package, making it suitable for both automotive and consumer applications.

Maximum Input Offset Voltage: 5000 uV

A low input offset voltage ensures better precision in applications, making this op-amp ideal for circuits requiring high accuracy.

Maximum Average Bias Current (IIB): 0.1 uA

This ultra-low bias current is advantageous for high-impedance applications, helping to prevent signal distortion.

Surface Mount: YES

Surface mount technology allows for smaller PCB designs and easier automated assembly, making this op-amp a favorite among modern electronic designs.

No. of Functions: 2

Having multiple functions in a single op-amp design enhances versatility, allowing it to perform various roles within a circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package is standard and facilitates efficient layout and thermal management on PCB designs.

Nominal Common Mode Reject Ratio: 80 dB

A high common mode reject ratio indicates excellent performance in rejecting noise, which is crucial for sensitive applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low supply voltage of 3V allows for applications in battery-powered devices, extending device lifespan.

No. of Terminals: 8

Having 8 terminals enables a range of configurations for flexible circuit design, accommodating various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package reduces PCB space requirements and allows for compact designs, which is particularly beneficial in portable devices.

Maximum Supply Voltage Limit: 14 V

A supply voltage limit of 14V allows for operation in a wide range of applications, enhancing versatility.

Maximum Operating Temperature: 125 °C

This high operating temperature rating ensures reliable performance in extreme environments, making it suitable for automotive use.

Minimum Operating Temperature: -40 °C

The ability to function at low temperatures makes this op-amp reliable for outdoor and automotive applications in varying climates.

Terminal Position: DUAL

Dual terminal positions facilitate easier layout options on PCBs, enabling better design flexibility.

Maximum Seated Height: 1.75 mm

The low seated height is beneficial for chip stacking or minimizing the profile of assembled boards.

Width: 3.9 mm

A narrow width supports high-density packaging and efficient use of PCB space.

Length: 4.9 mm

Short length supports compact designs while ensuring proper signal integrity.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this ensures reliability in high-demand environments subject to thermal stress.

Nominal Unity Gain Bandwidth: 4000 kHz

A high unity gain bandwidth allows this op-amp to operate effectively in high-frequency applications, catering to advanced signal processing needs.

Technology: BICMOS

Utilizing BICMOS technology combines the advantages of both bipolar and CMOS transistors, providing high performance and low power consumption.

Terminal Form: GULL WING

Gull wing terminals promote better soldering reliability and ease of assembly on PCBs.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is versatile and can be used in a wide array of analog signal processing applications.

Nominal Slow Rate: 1.3 V/us

A nominal slew rate of 1.3 V/us allows for fast response times, making the device suitable for dynamic signal applications.

Terminal Pitch: 1.27 mm

The standard terminal pitch allows compatibility with various PCB designs and simplifies the assembly process.

Technical Specifications

Operational Amplifiers (Op Amps) RT922IYDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Technology:

BICMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

1.3 V/us

Peak Bias Current:

100 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

RT922IYDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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