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LM358YPT

STMicroelectronics

LM358YPT by STMicroelectronics

LM358YPT by STMicroelectronics is a dual operational amplifier in a compact 8-terminal package. It features a max input offset voltage of 9 mV, low bias current of 0.2 µA, and operates at supply voltages up to ±15 V, ideal for automotive applications. Its high CMRR of 60 dB ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,475 parts In-Stock

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7,475

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Digiode

USA . 4,011 parts In-Stock

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4,011

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Anansix

USA . 2,376 parts In-Stock

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2,376

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,144 parts In-Stock

1+ parts

$3.732

100+ parts

-

1k+ parts

$3.359

10k+ parts

-

1,144

$3.732

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$3.359

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Microchip USA

USA . 241 parts In-Stock

1+ parts

$5.530

100+ parts

$5.530

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$5.530

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$5.530

241

$5.530

$5.530

$5.530

$5.530

MKK Technologies

India . 1,181 parts In-Stock

1+ parts

$7.019

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1,181

$7.019

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DigiPath Technology Company

USA . 1,181 parts In-Stock

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$7.019

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1,181

$7.019

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AZTECH Wire

Italy . 1,207 parts In-Stock

1+ parts

$15.240

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1,207

$15.240

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Corphita

USA . 3,277 parts In-Stock

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3,277

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Vigor

Singapore . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 1,740 parts In-Stock

1+ parts

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$4.463

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1,740

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$4.463

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Overview

Elevate your designs with the LM358YPT from STMicroelectronics, a trusted name in innovation and reliability. This dual operational amplifier boasts outstanding precision with incredibly low bias current and offset voltage, ensuring optimal performance in automotive and industrial applications. Experience enhanced signal integrity and efficiency in compact packages, all backed by AEC-Q100 certification for quality assurance. Choose LM358YPT and empower your projects with excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The robust plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 9000 uV

A low input offset voltage is critical for precision applications, ensuring accurate signal amplification with minimal error.

Maximum Average Bias Current (IIB): 0.2 uA

This low bias current minimizes power consumption and heat generation, making the amplifier suitable for battery-operated devices.

Surface Mount: YES

Surface-mount technology allows for compact designs and efficient assembly on PCBs, enhancing versatility in design.

No. of Functions: 2

Having dual functional capabilities increases flexibility in design applications, allowing the device to serve multiple roles.

Screening Level: AEC-Q100

This automotive-grade rating ensures reliability and performance in harsh environments, suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape is advantageous for circuit layout and design efficiency, optimizing space on the PCB.

Nominal Common Mode Reject Ratio: 60 dB

A high CMRR ensures that common noise signals are effectively rejected, resulting in cleaner signal amplification.

Nominal Supply Voltage / Vsup (V): 5

This nominal supply voltage is standard for many electronic circuits, facilitating easy integration into existing designs.

Power Supplies (V): +-1.5/+-15/3/30

Versatile voltage supply options allow adaptability to a wide range of applications, enhancing the product's utility.

No. of Terminals: 8

An 8-terminal configuration provides sufficient connectivity for various signals and power, simplifying circuit design.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile lend themselves to space-constrained designs, making this op-amp ideal for compact applications.

Minimum Slew Rate: 0.3 V/us

While moderate, this slew rate allows the amplifier to handle reasonable frequency signals, suitable for many general applications.

Maximum Supply Voltage Limit: 32 V

A high supply voltage limit enhances application versatility, allowing usage in demanding circuits.

Maximum Operating Temperature: 70 °C

This elevated operating temperature range makes it suitable for applications exposed to varying thermal conditions.

Maximum Bias Current (IIB) @25°C: 0.15 uA

This parameter indicates low bias performance, further enhancing precision in signal processing.

Frequency Compensation: YES

Integrated frequency compensation ensures stable performance across a range of frequencies, simplifying design efforts.

Minimum Voltage Gain: 25000

A high voltage gain provides significant amplification of the input signals, making it ideal for weak signal applications.

Minimum Operating Temperature: 0 °C

This allows for operation in colder environments, making it versatile for diverse application settings.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish ensures excellent conductivity and resistance to corrosion, which is crucial for long-term reliability.

Terminal Position: DUAL

Dual terminal positioning simplifies PCB layout, reducing the design complexity while maintaining signal integrity.

Maximum Seated Height: 1.2 mm

The low profile minimizes the overall height of the assembly, which is beneficial in compact applications.

Width: 3 mm

A narrow width allows for a greater density of components on a PCB, optimizing space usage in device design.

Length: 4.4 mm

The compact length contributes to efficient placement on PCBs, facilitating designs in space-constrained environments.

Temperature Grade: COMMERCIAL

Ideal for standard commercial applications, this temperature grade assures adequate performance in typical environmental conditions.

Nominal Unity Gain Bandwidth: 1100 kHz

A high unity gain bandwidth permits the amplifier to handle a broad range of frequencies, increasing its application scope.

Technology: BIPOLAR

Bipolar technology provides high speed and excellent signal integrity, making it suitable for a wide array of applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve the mechanical strength of the connections.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile components, effectively serving in amplifying, filtering, or oscillating applications.

Maximum Supply Current: 2 mA

A low power consumption of 2 mA makes this op-amp optimal for energy-efficient designs, particularly in battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture benefits applications with higher bandwidth and improved linearity, enhancing signal fidelity.

Packing Method: TAPE AND REEL

Tape and reel packaging allows for efficient automation in manufacturing processes, improving production speed and reducing costs.

Nominal Slow Rate: 0.6 V/us

This moderate slew rate indicates stable performance that balances fast response with control in many general-purpose applications.

Terminal Pitch: 0.65 mm

The fine terminal pitch allows for higher density designs, which is particularly useful in modern compact electronics.

Technical Specifications

Operational Amplifiers (Op Amps) LM358YPT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±15/3/30 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

LM358YPT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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