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LM358AWPT

STMicroelectronics

LM358AWPT by STMicroelectronics

LM358AWPT by STMicroelectronics is a dual operational amplifier in a compact SMD package. It features a max input offset voltage of 4000 µV, low bias current of 0.1 µA, and operates at a nominal voltage of 5 V. Ideal for precision signal processing in various electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,733 parts In-Stock

1+ parts

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9,733

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Digiode

USA . 2,390 parts In-Stock

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2,390

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Anansix

USA . 1,117 parts In-Stock

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1,117

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 1,420 parts In-Stock

1+ parts

$0.150

100+ parts

-

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1,420

$0.150

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Microchip USA

USA . 10,392 parts In-Stock

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$1.230

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10,392

$1.230

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IDEA Electronic Components Group

UK . 873 parts In-Stock

1+ parts

$6.094

100+ parts

-

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$5.485

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873

$6.094

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$5.485

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MKK Technologies

India . 52 parts In-Stock

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$11.460

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52

$11.460

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DigiPath Technology Company

USA . 52 parts In-Stock

1+ parts

$11.460

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52

$11.460

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AZTECH Wire

Italy . 170 parts In-Stock

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$11.460

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170

$11.460

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Corphita

USA . 2,599 parts In-Stock

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2,599

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Parana Technologies

USA . 181 parts In-Stock

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$7.286

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181

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$7.286

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Overview

Elevate your designs with the LM358AWPT from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This dual operational amplifier excels in precision and energy efficiency, making it perfect for a wide range of applications—from signal conditioning to sensor interfacing. With its compact profile and exceptional performance, the LM358AWPT empowers engineers to create reliable, high-quality products that stand out in today's competitive market. Experience superior quality and innovation at every turn!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliable performance and protection against environmental factors.

Maximum Input Offset Voltage: 4000 uV

A low offset voltage allows for more accurate signal processing, making this op-amp ideal for precision applications.

Maximum Average Bias Current (IIB): 0.1 uA

The low bias current contributes to low power consumption, making it suitable for battery-operated devices.

Surface Mount: YES

Surface mount technology facilitates compact circuit designs, saving space on printed circuit boards (PCBs).

No. of Functions: 2

Multi-functional capabilities allow for versatile applications, reducing component count in designs.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient PCB layout and integration with other components.

Nominal Common Mode Reject Ratio: 85 dB

High CMRR reduces the effect of noise and interference, making it suitable for high-fidelity audio and sensitive signal applications.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage simplifies design and compatibility with common power sources.

Power Supplies (V): 5

Operating at 5V ensures lower power consumption and is compatible with many digital systems.

No. of Terminals: 8

The 8-terminal configuration provides flexibility and integration into various circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact packaging allows for high-density mounting, essential for modern electronic devices.

Minimum Slew Rate: 0.3 V/us

Adequate slew rate supports a range of applications, though not ultra-fast, making it suitable for many general-purpose circuits.

Maximum Supply Voltage Limit: 32 V

This high supply voltage limit provides flexibility in various applications, including those requiring higher operational voltages.

Maximum Operating Temperature: 70 °C

The ability to operate at higher temperatures enhances reliability in diverse environmental conditions.

Maximum Bias Current (IIB) @25°C: 0.05 uA

Extremely low bias current at room temperature further enhances the device's suitability for low-power applications.

Frequency Compensation: YES

Integrated frequency compensation simplifies design and ensures stability across a wide range of frequencies.

Minimum Voltage Gain: 25000

High voltage gain enables strong signal amplification, necessary for many applications, including sensor interfacing.

Minimum Operating Temperature: 0 °C

The wide operating temperature range allows for application in various environments, from cold to warm climates.

Terminal Position: DUAL

Dual terminal positioning is advantageous for circuit design, facilitating easier layout and routing.

Maximum Seated Height: 1.2 mm

Low profile design helps in applications where height restrictions are crucial.

Width: 3 mm

Compact width contributes to space-saving designs and enhances ease of integration.

Micropower: YES

Micropower operation is ideal for energy-efficient designs, extending battery life in portable devices.

Length: 4.4 mm

Short length helps in fitting within compact layouts and minimizes PCB space.

Temperature Grade: COMMERCIAL

Commercial-grade components ensure sufficient reliability for typical consumer electronics applications.

Nominal Unity Gain Bandwidth: 1100 kHz

Adequate unity gain bandwidth makes it suitable for various applications requiring wide frequency response.

Technology: BIPOLAR

Bipolar technology typically provides better performance in low-noise applications, ideal for audio and RF circuits.

Terminal Form: GULL WING

Gull wing terminals ease soldering, providing reliable electrical connections and facilitating automated assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are foundational components in analog electronics, suitable for a multitude of applications.

Maximum Supply Current: 1 mA

Low supply current ensures energy efficiency, ideal for battery-powered or energy-sensitive applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture allows for stable operation and easy integration into feedback circuits, enhancing performance.

Packing Method: TAPE AND REEL

Tape and reel packing allows for automated assembly processes, ensuring efficient manufacturing and reduced handling costs.

Nominal Slow Rate: 0.6 V/us

Sufficient slow rate aids in applicability for many standard circuits, balancing performance and power consumption.

Terminal Pitch: 0.65 mm

Smaller terminal pitch is beneficial for high-density designs, optimizing space on PCBs.

Technical Specifications

Operational Amplifiers (Op Amps) LM358AWPT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

100 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

LM358AWPT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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