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LM2904WN

STMicroelectronics

LM2904WN by STMicroelectronics

LM2904WN by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9 mV and a common mode reject ratio of 85 dB. It operates within -40 °C to 125 °C, making it ideal for automotive applications. With a nominal voltage of 5V, it ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,687 parts In-Stock

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5,687

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Digiode

USA . 4,884 parts In-Stock

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4,884

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Anansix

USA . 1,812 parts In-Stock

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1,812

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 32 parts In-Stock

1+ parts

$1.291

100+ parts

-

1k+ parts

$1.162

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32

$1.291

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$1.162

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MKK Technologies

India . 855 parts In-Stock

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$2.427

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855

$2.427

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DigiPath Technology Company

USA . 855 parts In-Stock

1+ parts

$2.427

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855

$2.427

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Ampacity Inc.

Singapore . 807 parts In-Stock

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$4.410

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807

$4.410

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Microchip USA

USA . 430 parts In-Stock

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$5.887

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430

$5.887

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AZTECH Wire

Italy . 128 parts In-Stock

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$16.300

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128

$16.300

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Component Stockers USA

USA . 646 parts In-Stock

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$99.990

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646

$99.990

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Vigor

Singapore . 2,993 parts In-Stock

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2,993

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Corphita

USA . 2,130 parts In-Stock

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2,130

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Parana Technologies

USA . 732 parts In-Stock

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$1.543

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732

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$1.543

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Overview

Elevate your designs with the LM2904WN from STMicroelectronics, a trusted leader in high-quality semiconductor solutions. This dual operational amplifier combines exceptional performance with reliability, making it perfect for a variety of applications—from automotive systems to precision signal processing. With low bias current and impressive common-mode rejection, you gain enhanced accuracy and efficiency, ensuring your projects achieve peak performance while enjoying the backing of a renowned manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making the op-amp suitable for a variety of applications.

Maximum Input Offset Voltage: 9000 uV

With a relatively high input offset voltage, this op-amp can be used in applications where extreme precision is not critical, offering a balance between performance and cost.

Maximum Average Bias Current (IIB): 0.2 uA

Low average bias current helps in reducing the impact on circuit performance, making the op-amp an efficient choice for battery-powered or low-power applications.

No. of Functions: 2

Multiple functions in a single device enhance versatility, allowing for more complex designs without needing additional components.

Package Shape: RECTANGULAR

The rectangular package shape simplifies PCB layout and allows for better space utilization in circuit design.

Nominal Common Mode Reject Ratio: 85 dB

A high common mode reject ratio ensures better performance in noisy environments, making this op-amp reliable for signal processing.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this op-amp compatible with standard logic levels in digital circuits.

Power Supplies (V): ±1.5/±15/3/30

Flexible power supply options widen the range of applications, allowing the op-amp to be used in various circuit architectures.

No. of Terminals: 8

An 8-terminal configuration provides a compact design while facilitating multiple functionalities and connections.

Package Style (Meter): IN-LINE

In-line package style makes assembly easier and is well-suited for automated processes, speeding up production.

Minimum Slew Rate: 0.3 V/µs

A minimum slew rate ensures the op-amp can respond to rapid signal changes, making it ideal for dynamic applications.

Maximum Supply Voltage Limit: 32 V

A high maximum supply voltage limit allows this op-amp to be used in high-voltage applications without risk of damage.

Maximum Operating Temperature: 125 °C

With a high-temperature rating, this op-amp is suitable for automotive and industrial applications where temperature extremes are common.

Maximum Bias Current (IIB) @25 °C: 0.15 µA

Low bias current at 25 °C ensures minimal interference with signal integrity, enhancing overall circuit performance.

Frequency Compensation: YES

Inclusion of frequency compensation facilitates stable operation across a wider frequency range, ideal for feedback applications.

Minimum Voltage Gain: 25000

A high minimum voltage gain indicates strong amplification capabilities, making it effective for weak signal amplification applications.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature expands application possibilities in harsh environments, including automotive and aerospace.

Terminal Finish: MATTE TIN

Matte tin finish on terminals ensures good solderability and corrosion resistance, enhancing reliability in manufacturing and operation.

Terminal Position: DUAL

Dual terminal positioning allows for flexible circuit design and layout options, accommodating diverse application needs.

Maximum Seated Height: 4.8 mm

A compact seated height helps save PCB space, beneficial for designs where real estate is at a premium.

Width: 7.62 mm

The narrow width enables the op-amp to fit into tight layouts, enhancing circuit design flexibility.

Temperature Grade: AUTOMOTIVE

Rated for automotive use, this op-amp is designed to withstand the rigors of temperature fluctuations and environmental stresses, ensuring reliability in vehicles.

Nominal Unity Gain Bandwidth: 1100 kHz

A high unity gain bandwidth allows for the effective amplification of high-frequency signals, making it suitable for a wide variety of applications.

Technology: BIPOLAR

Bipolar technology provides better performance in terms of speed and bandwidth compared to some other technologies, making it a strong choice for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enhances connection stability and is ideal for prototyping and rugged applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it supports a broad spectrum of applications, including signal conditioning, filtering, and mathematical operations.

Maximum Supply Current: 2 mA

Low maximum supply current ensures energy efficiency, making it suitable for low-power applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture offers versatility and ease of use, making this op-amp ideal for a variety of signal processing applications.

Packing Method: TUBE

Tube packing enables safer transport and easier handling of components, reducing the risk of damage during shipping.

Nominal Slow Rate: 0.6 V/µs

A nominal slow rate ensures stable transitions, which is important for applications requiring precision and accuracy in signal processing.

Terminal Pitch: 2.54 mm

A standard terminal pitch facilitates integration with widely-used PCB layouts, enhancing compatibility across various designs.

Technical Specifications

Operational Amplifiers (Op Amps) LM2904WN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±15/3/30 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2 mA

Physical Characteristics

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.189 in (4.8 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LM2904WN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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