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FERD30M45D

STMicroelectronics

FERD30M45D by STMicroelectronics

FERD30M45D by STMicroelectronics is a single rectifier diode designed for high-performance applications. It features a max reverse current of 1200 µA, operates at up to 175 °C, and handles peak reverse voltages of 45 V. Ideal for power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,982 parts In-Stock

1+ parts

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4,982

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Anansix

USA . 1,448 parts In-Stock

1+ parts

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1,448

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Digiode

USA . 1,208 parts In-Stock

1+ parts

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1,208

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,122 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$0.050

10k+ parts

-

2,122

$0.055

-

$0.050

-

MKK Technologies

India . 601 parts In-Stock

1+ parts

$0.104

100+ parts

-

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601

$0.104

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DigiPath Technology Company

USA . 601 parts In-Stock

1+ parts

$0.104

100+ parts

-

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601

$0.104

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AZTECH Wire

Italy . 285 parts In-Stock

1+ parts

$12.250

100+ parts

-

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285

$12.250

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Native Components

USA . 973 parts In-Stock

1+ parts

$839.000

100+ parts

$822.220

1k+ parts

$813.830

10k+ parts

$805.440

973

$839.000

$822.220

$813.830

$805.440

Northwest PG Solutions

USA . 1,227 parts In-Stock

1+ parts

$922.900

100+ parts

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1,227

$922.900

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Alle Elektronik GmbH

Germany . 3,572 parts In-Stock

1+ parts

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3,572

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Parana Technologies

USA . 1,835 parts In-Stock

1+ parts

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$0.066

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1,835

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$0.066

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Corphita

USA . 1,700 parts In-Stock

1+ parts

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1,700

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Overview

Unlock superior performance with the FERD30M45D from STMicroelectronics—a leading name in semiconductor innovation. This high-quality rectifier diode is designed for reliability, offering exceptional efficiency and durability across various applications, from power supplies to motor control. With a robust construction that withstands extreme temperatures and high currents, it delivers unmatched value and peace of mind, ensuring your projects achieve their full potential. Experience the benefits of precision and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent insulation and protection against environmental factors, enhancing reliability.

Config: SINGLE

A single configuration simplifies circuit design and integration, making it ideal for various applications.

Maximum Reverse Current: 1200 uA

Low reverse current ensures minimized power loss and improved efficiency, making this diode suitable for high-performance applications.

Package Shape: RECTANGULAR

The rectangular package design allows for efficient space utilization on PCBs and facilitates heat dissipation.

No. of Terminals: 2

With two terminals, this diode is straightforward to install and minimizes complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances mechanical stability and thermal performance, making installation easy in various environments.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance broadens application possibilities, especially in demanding environments.

Terminal Position: SINGLE

A single terminal position provides ease of access and simplifies layout in circuits.

Case Connection: CATHODE

A cathode connection ensures proper orientation in circuits and enhances safety features.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.42 V

Low forward voltage drop improves efficiency by reducing power loss during operation, ideal for energy-sensitive applications.

Maximum Repetitive Peak Reverse Voltage: 45 V

This high reverse voltage capability allows for use in various high-voltage applications without risk of breakdown.

Maximum Non Repetitive Peak Forward Current: 250 A

The ability to handle high forward currents makes this diode suitable for power-intensive applications such as inverters and converters.

Diode Element Material: SILICON

Silicon material ensures reliable performance and suitable characteristics for a wide range of electronic applications.

Technical Specifications

Diodes & Rectifiers FERD30M45D attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

1200 uA

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

FERD30M45D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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