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FERD30M45CR

STMicroelectronics

FERD30M45CR by STMicroelectronics

FERD30M45CR by STMicroelectronics is a silicon rectifier diode with a max reverse voltage of 45V and forward voltage drop of 0.47V. It features a common cathode configuration and operates at up to 175 °C. Ideal for high-current applications, it supports efficient power management.

Median Price

$1.785

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 833 parts In-Stock

1+ parts

$1.570

100+ parts

$1.040

1k+ parts

$0.801

10k+ parts

$0.753

833

$1.570

$1.040

$0.801

$0.753

DigiKey

USA . 979 parts In-Stock

1+ parts

$2.000

100+ parts

$0.875

1k+ parts

$0.700

10k+ parts

-

979

$2.000

$0.875

$0.700

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,333 parts In-Stock

1+ parts

$1.492

100+ parts

-

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-

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1,333

$1.492

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-

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Vyrian

USA . 4,647 parts In-Stock

1+ parts

-

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-

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4,647

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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Anansix

USA . 1,312 parts In-Stock

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-

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1,312

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 19 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

$0.044

10k+ parts

-

19

$0.049

-

$0.044

-

MKK Technologies

India . 1,800 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

1,800

$0.092

-

-

-

DigiPath Technology Company

USA . 1,800 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

1,800

$0.092

-

-

-

Corphita

USA . 1,732 parts In-Stock

1+ parts

$1.413

100+ parts

-

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1,732

$1.413

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Component Stockers USA

USA . 35 parts In-Stock

1+ parts

$1.440

100+ parts

-

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35

$1.440

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Native Components

USA . 629 parts In-Stock

1+ parts

$5.790

100+ parts

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629

$5.790

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QUARKTWIN TECHNOLOGY LTD

USA . 13,556 parts In-Stock

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13,556

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Kepictronics

USA . 8,989 parts In-Stock

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8,989

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A-Z Elektronik GmbH

Germany . 6,162 parts In-Stock

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6,162

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Microchip USA

USA . 5,800 parts In-Stock

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5,800

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Alle Elektronik GmbH

Germany . 4,108 parts In-Stock

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4,108

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Perfect Parts

USA . 1,456 parts In-Stock

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1,456

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Metaverse IC Inc.

Canada . 1,100 parts In-Stock

1+ parts

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100+ parts

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1,100

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Parana Technologies

USA . 119 parts In-Stock

1+ parts

-

100+ parts

$0.058

1k+ parts

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119

-

$0.058

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Northwest PG Solutions

USA . 106 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$5.674

10k+ parts

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106

-

-

$5.674

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Overview

Unlock the potential of your projects with the FERD30M45CR from STMicroelectronics—a trusted leader in semiconductor innovation. This high-performance rectifier diode ensures reliability and efficiency, making it ideal for a range of applications from power management to automotive systems. With its robust design and superior heat resistance, this component enhances durability, providing significant value and peace of mind for engineers and designers alike. Choose STMicroelectronics for quality you can depend on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this diode reliable in a variety of conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simplified circuit designs and makes it versatile for various applications.

Maximum Reverse Current: 600 uA

A low maximum reverse current increases efficiency and minimizes energy loss, making it a more energy-efficient choice.

Package Shape: RECTANGULAR

The rectangular shape optimizes board space usage and allows for flexible design in electronic devices.

No. of Terminals: 3

Having three terminals provides for various connection configurations, making the diode adaptable to different circuit requirements.

Package Style (Meter): IN-LINE

The in-line package style is easy to assemble, reducing manufacturing complexity and enhancing production efficiency.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can function reliably in high-temperature environments, making it suitable for demanding applications.

Terminal Position: SINGLE

The single terminal position simplifies integration into circuit boards, facilitating easier assembly and maintenance.

Case Connection: CATHODE

The cathode connection improves performance in high-speed switching applications, making this diode a great fit for modern electronics.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), which is essential for power supply applications.

Maximum Forward Voltage (VF): 0.47 V

The low forward voltage drop enhances energy efficiency and ensures effective performance, especially in power-sensitive applications.

Terminal Form: THROUGH-HOLE

Through-hole form provides strong mechanical support and reliable electrical connections, making it ideal for high-reliability applications.

No. of Elements: 2

Two elements allow enhanced current handling capacity and versatility in design, suitable for various electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 45 V

A robust peak reverse voltage rating ensures reliability in protecting circuits against voltage spikes, adding to the overall safety of the application.

Maximum Non-Repetitive Peak Forward Current: 250 A

A high peak forward current capability makes this diode suitable for applications requiring strong short-term current handling, improving reliability in demanding scenarios.

Diode Element Material: SILICON

Silicon is known for its excellent electrical properties, providing high performance and reliability, making this diode a preferred choice in many applications.

Technical Specifications

Diodes & Rectifiers FERD30M45CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.47 V

JESD-30 Code:

R-PSIP-T3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

600 uA

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FERD30M45CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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