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ESDAXLC6-1BU2K

STMicroelectronics

ESDAXLC6-1BU2K by STMicroelectronics

ESDAXLC6-1BU2K by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 30W, operates b/w -40 °C to 150°C, and has a breakdown voltage of 6V. Ideal for safeguarding sensitive components against electrostatic discharge (ESD) per IEC61000-4-2 standards.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,187 parts In-Stock

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Anansix

USA . 2,444 parts In-Stock

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2,444

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Digiode

USA . 1,887 parts In-Stock

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1,887

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 495 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

$0.157

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495

$0.175

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$0.157

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Native Components

USA . 153 parts In-Stock

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$0.313

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$0.300

153

$0.313

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$0.300

MKK Technologies

India . 2,291 parts In-Stock

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$0.329

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2,291

$0.329

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DigiPath Technology Company

USA . 2,291 parts In-Stock

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$0.329

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2,291

$0.329

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Northwest PG Solutions

USA . 2,048 parts In-Stock

1+ parts

$0.344

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$0.304

2,048

$0.344

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$0.304

AZTECH Wire

Italy . 339 parts In-Stock

1+ parts

$8.570

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339

$8.570

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Lixinc

USA . 3,223 parts In-Stock

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Corphita

USA . 412 parts In-Stock

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Parana Technologies

USA . 23 parts In-Stock

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$0.209

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23

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$0.209

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Overview

Elevate your designs with the ESDAXLC6-1BU2K from STMicroelectronics, a leader in innovative electronic solutions. This advanced transient suppression device ensures robust protection against voltage spikes, enhancing the reliability and longevity of your applications. With its compact design and exceptional thermal resilience, it delivers unparalleled performance in diverse environments—from consumer electronics to industrial systems—making it an essential choice for engineers seeking quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent durability and resistance to environmental factors, making the device reliable in various applications.

Config: SINGLE

Having a single configuration simplifies the design and integration into circuits, reducing the complexity in transient suppression solutions.

Surface Mount: YES

Surface mount capability allows for automated assembly, resulting in lower production costs and more compact circuit designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 30 W

The high power dissipation capability protects sensitive electronic components from transient voltage spikes, ensuring long-term reliability.

Maximum Reverse Current: 0.07 uA

The very low reverse current indicates minimal leakage during operation, improving the overall efficiency and performance of the circuit.

Package Shape: RECTANGULAR

The rectangular package shape is conducive for compact PCB layouts and can accommodate a variety of design requirements.

Reverse Test Voltage: 3 V

A reverse test voltage of 3 V allows for adequate assessment of the device's reliability under stress conditions, enhancing design security.

No. of Terminals: 2

Two terminal setups are standard for many applications, making the integration process straightforward and compatible with various circuit designs.

Package Style (Meter): CHIP CARRIER

The chip carrier package style provides excellent thermal and electrical performance, making it suitable for high-density circuit designs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures that the device can function in high-temperature environments without performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the device to be used in extreme environments, expanding its suitability across various industries.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for PCB layout, facilitating a low profile and efficient use of board space.

Minimum Breakdown Voltage: 6 V

A minimum breakdown voltage of 6 V ensures effective suppression of transients below this level, safeguarding sensitive components.

Reference Standard: IEC61000-4-2

Compliance with IEC61000-4-2 standards ensures the device meets strict safety and reliability criteria for transient voltage susceptibility.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device excels in protecting circuits from voltage spikes, enhancing overall circuit integrity.

Technology: AVALANCHE

Avalanche technology is known for its fast response times, providing effective protection against high-energy transient events.

Terminal Form: NO LEAD

No lead configuration minimizes space required on the PCB and contributes to the overall miniaturization of electronic devices.

Polarity: BIDIRECTIONAL

Bidirectional capability allows the device to effectively suppress transients in both directions, providing versatile and reliable protection.

Maximum Clamping Voltage: 19 V

A maximum clamping voltage of 19 V indicates that the device will effectively clamp potentially damaging voltage spikes below levels that could harm sensitive components.

Diode Element Material: SILICON

Silicon as the diode element material ensures good thermal conductivity and stability, contributing to the reliable performance of the device.

Technical Specifications

Transient Suppression Devices ESDAXLC6-1BU2K attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

6 V

Maximum Clamping Voltage:

19 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

Maximum Non Repetitive Peak Reverse Power Dissipation:

30 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC61000-4-2

Maximum Reverse Current:

.07 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESDAXLC6-1BU2K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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