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ESDAVLC6V1-1BT2

STMicroelectronics

ESDAVLC6V1-1BT2 by STMicroelectronics

ESDAVLC6V1-1BT2 by STMicroelectronics is a bidirectional transient voltage suppressor diode with a breakdown voltage of 6.1 V and max power dissipation of 30 W. It features a compact chip carrier design for surface mounting, ideal for protecting sensitive electronics. Operating at up to 125 °C, it ensures reliable performance in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,539 parts In-Stock

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3,539

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Digiode

USA . 1,644 parts In-Stock

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1,644

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Anansix

USA . 1,110 parts In-Stock

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1,110

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 389 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

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$0.148

389

$0.154

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$0.148

IDEA Electronic Components Group

UK . 1,860 parts In-Stock

1+ parts

$0.164

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$0.147

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1,860

$0.164

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$0.147

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Northwest PG Solutions

USA . 1,334 parts In-Stock

1+ parts

$0.170

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$0.150

1,334

$0.170

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$0.150

MKK Technologies

India . 105 parts In-Stock

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$0.308

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105

$0.308

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DigiPath Technology Company

USA . 105 parts In-Stock

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$0.308

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105

$0.308

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AZTECH Wire

Italy . 907 parts In-Stock

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$20.450

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907

$20.450

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Component Stockers USA

USA . 720 parts In-Stock

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$99.990

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720

$99.990

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Metaverse IC Inc.

Canada . 35,014 parts In-Stock

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35,014

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Parana Technologies

USA . 2,027 parts In-Stock

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$0.196

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2,027

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$0.196

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Corphita

USA . 562 parts In-Stock

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Overview

Elevate your designs with the ESDAVLC6V1-1BT2 from STMicroelectronics, a leader in innovative solutions. This robust transient suppression device ensures exceptional reliability and protection for your sensitive electronics, safeguarding against voltage spikes that can compromise performance. Ideal for consumer electronics, automotive applications, and industrial systems, this compact chip offers unparalleled quality, ensuring your products stand the test of time while enhancing customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body offers good protection against environmental factors, ensuring reliability in varied conditions.

Config: SINGLE

A single configuration allows for simplified integration into circuits, optimizing space and design.

Surface Mount: YES

Surface mount technology allows for easier automated assembly, improving manufacturing efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 30 W

With a high power dissipation capability, this device can effectively manage transient events without failure.

Nominal Breakdown Voltage: 6.1 V

The nominal breakdown voltage provides reliable protection by clamping voltage spikes to safe levels in sensitive circuits.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy handling and placement within compact electronic assemblies.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the potential for errors during installation.

Package Style (Meter): CHIP CARRIER

Chip carrier style is conducive for compact designs, making it suitable for high-density circuit layouts.

Maximum Operating Temperature: 125 °C

The high operating temperature rating ensures functionality in demanding thermal conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The premium finish enhances corrosion resistance and ensures reliable electrical connections over time.

Terminal Position: BOTTOM

Bottom-terminated terminals allow for efficient thermal dissipation and optimal mounting on PCBs.

Minimum Breakdown Voltage: 6.1 V

The minimum breakdown voltage ensures robust voltage clamping, safeguarding sensitive components.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds allows for consistent soldering without damaging the device.

Peak Reflow Temperature °C: 260

The tolerable peak reflow temperature allows this device to withstand standard soldering processes in production.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor, this diode is essential for protecting circuits from voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology ensures rapid response and effective clamping of transient voltages, enhancing circuit safety.

Terminal Form: NO LEAD

No lead design minimizes the footprint, making it an excellent choice for space-constrained applications.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates reasonable handling requirements, appropriate for standard manufacturing environments.

Polarity: BIDIRECTIONAL

Bidirectional capabilities provide flexibility in circuit design, easily accommodating AC signals.

Diode Element Material: SILICON

Silicon material offers excellent electrical characteristics and reliability, ensuring long-lasting performance.

Technical Specifications

Transient Suppression Devices ESDAVLC6V1-1BT2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

6.1 V

Nominal Breakdown Voltage:

6.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

30 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDAVLC6V1-1BT2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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