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ESDAVLC6V1-1BM2

STMicroelectronics

ESDAVLC6V1-1BM2 by STMicroelectronics

ESDAVLC6V1-1BM2 by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for surface mount applications. It features a max reverse power dissipation of 30W, breakdown voltage of 6.1V, and operates up to 125 °C. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,794 parts In-Stock

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3,794

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Anansix

USA . 1,577 parts In-Stock

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1,577

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Digiode

USA . 540 parts In-Stock

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540

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,051 parts In-Stock

1+ parts

$0.042

100+ parts

-

1k+ parts

$0.038

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1,051

$0.042

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$0.038

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Native Components

USA . 616 parts In-Stock

1+ parts

$0.056

100+ parts

-

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$0.054

616

$0.056

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$0.054

MKK Technologies

India . 2,022 parts In-Stock

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$0.080

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2,022

$0.080

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DigiPath Technology Company

USA . 2,022 parts In-Stock

1+ parts

$0.080

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2,022

$0.080

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AZTECH Wire

Italy . 339 parts In-Stock

1+ parts

$16.540

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339

$16.540

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iodParts Technologies Inc.

India . 12,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,287 parts In-Stock

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11,287

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Kepictronics

USA . 10,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,454 parts In-Stock

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3,454

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Corphita

USA . 2,817 parts In-Stock

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2,817

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Northwest PG Solutions

USA . 1,108 parts In-Stock

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1,108

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Parana Technologies

USA . 144 parts In-Stock

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$0.051

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144

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$0.051

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Overview

Elevate your designs with the ESDAVLC6V1-1BM2 from STMicroelectronics, a leader in innovative electronic components. This top-tier transient suppression device offers robust protection against voltage spikes, ensuring the longevity and reliability of your applications. Its compact, surface-mount design is perfect for space-constrained environments, making it ideal for consumer electronics, automotive systems, and industrial equipment. Trust in STMicroelectronics' legacy of quality and performance to safeguard your projects efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, ensuring long-lasting performance.

Config: SINGLE

A single configuration simplifies integration into circuits while providing effective transient suppression.

Surface Mount: YES

Surface mount capability allows for compact designs, making it suitable for modern PCB layouts.

Maximum Non Repetitive Peak Reverse Power Dissipation: 30 W

This high power dissipation capacity enables the device to handle significant transient events without damage.

Package Shape: RECTANGULAR

Rectangular package shape aids in efficient layout design and space optimization on PCBs.

No. of Terminals: 2

Two terminals facilitate easy connection and integration, promoting efficient system design.

Package Style (Meter): CHIP CARRIER

The chip carrier style is ideal for automated assembly processes, ensuring high reliability in production.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this device can perform reliably in demanding environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This terminal finish enhances conductivity and corrosion resistance, improving overall performance and reliability.

Terminal Position: BOTTOM

Bottom terminal positioning is optimized for space-saving layouts and can improve thermal management.

Minimum Breakdown Voltage: 6.1 V

A minimum breakdown voltage of 6.1 V makes this device suitable for various circuit applications needing reliable protection.

Maximum Time At Peak Reflow Temperature: 30 s

Withstanding peak reflow temperatures ensures compatibility with standard soldering processes, enhancing assembly efficiency.

Peak Reflow Temperature: 260 C

A peak reflow temperature of 260 °C means this device can endure high temperature soldering without compromising performance.

Diode Type: TRANS VOTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it effectively safeguards sensitive components from voltage spikes.

Technology: AVALANCHE

Avalanche technology ensures rapid response to transients, providing effective protection against overvoltage conditions.

Terminal Form: NO LEAD

The no lead design minimizes size and weight, making it ideal for compact electronic products.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 indicates moderate sensitivity to moisture, suggesting proper handling and storage are necessary but manageable.

Polarity: BIDIRECTIONAL

Bidirectional polarity means it can handle transients from both directions, offering versatile protection in various applications.

Diode Element Material: SILICON

Silicon material is well-known for its effective electrical properties, ensuring reliable transient suppression.

Technical Specifications

Transient Suppression Devices ESDAVLC6V1-1BM2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

6.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

30 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDAVLC6V1-1BM2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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