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ESDAULC6-3BF2

STMicroelectronics

ESDAULC6-3BF2 by STMicroelectronics

ESDAULC6-3BF2 by STMicroelectronics is a bidirectional transient voltage suppressor diode with a breakdown voltage of 7.6 V and operates up to 150 °C. Its compact grid array design features 4 elements for effective surge protection. Ideal for safeguarding sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,953 parts In-Stock

1+ parts

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3,953

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Digiode

USA . 3,019 parts In-Stock

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3,019

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ACDS - Activité Composants Distribution Service

France . 2,339 parts In-Stock

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2,339

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Anansix

USA . 2,154 parts In-Stock

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2,154

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Prism Electronics

USA . 997 parts In-Stock

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997

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,030 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

$0.156

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-

2,030

$0.173

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$0.156

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MKK Technologies

India . 1,892 parts In-Stock

1+ parts

$0.325

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1,892

$0.325

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DigiPath Technology Company

USA . 1,892 parts In-Stock

1+ parts

$0.325

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1,892

$0.325

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Native Components

USA . 909 parts In-Stock

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$1.610

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909

$1.610

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Northwest PG Solutions

USA . 1,457 parts In-Stock

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$1.771

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1,457

$1.771

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AZTECH Wire

Italy . 903 parts In-Stock

1+ parts

$12.540

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903

$12.540

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Component Stockers USA

USA . 245 parts In-Stock

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$99.990

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245

$99.990

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Corphita

USA . 3,892 parts In-Stock

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3,892

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Cyclops Electronics Ltd (Excess)

UK . 2,339 parts In-Stock

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Perfect Parts

USA . 1,117 parts In-Stock

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1,117

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 4 parts In-Stock

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$0.207

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4

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$0.207

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Overview

Unlock unparalleled protection for your electronic designs with the ESDAULC6-3BF2 from STMicroelectronics. Renowned for their innovation and quality, STMicroelectronics delivers a robust transient suppression solution that ensures reliability in various applications, from consumer electronics to automotive systems. This versatile device not only safeguards against voltage spikes but also enhances overall performance, giving you the peace of mind to focus on what matters most—bringing your vision to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and provides excellent resistance to environmental factors, making it suitable for diverse applications.

Config: COMMON ANODE, 4 ELEMENTS

A common anode configuration allows flexibility in circuit design and simplifies connections, making this device versatile for various transient suppression needs.

Surface Mount: YES

Surface mount technology reduces space requirements on PCBs, enabling smaller and denser circuit designs, which is essential in modern electronic devices.

Nominal Breakdown Voltage: 7.6 V

With a nominal breakdown voltage of 7.6 V, this device effectively clamps voltage spikes, offering reliable protection for sensitive components.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and aligns well with standard layout practices, facilitating easy integration into existing designs.

No. of Terminals: 4

Having 4 terminals allows for multiple connections, making it easier to accommodate various circuit designs and ensuring strong electrical performance.

Package Style (Meter): GRID ARRAY

The grid array package style offers enhanced thermal performance and aids in efficient soldering processes during manufacturing.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures that this device can perform reliably even in demanding environments, making it suitable for industrial applications.

Terminal Finish: MATTE TIN

A matte tin terminal finish enhances solderability and provides good corrosion resistance, ensuring longevity and stable performance in various conditions.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier integration into PCB assemblies and ensures a compact design footprint.

Minimum Breakdown Voltage: 6 V

A minimum breakdown voltage of 6 V provides a reliable threshold to protect sensitive components from voltage transients that could cause damage.

Maximum Breakdown Voltage: 9.2 V

The maximum breakdown voltage of 9.2 V allows for effective clamping of higher voltage transients, enhancing the protection of connected devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device efficiently mitigates voltage spikes, ensuring the protection of sensitive electronic components.

Technology: AVALANCHE

Avalanche technology offers rapid response to transient events, providing excellent surge protection and enhancing circuit reliability.

Terminal Form: BALL

Ball terminal form enables reliable connections and improves the overall integrity of solder joints in PCB applications.

No. of Elements: 4

Having 4 elements enhances the effectiveness of transient suppression, providing redundancy and improved protection against voltage spikes.

Polarity: BIDIRECTIONAL

Bidirectional operation allows this device to protect against voltage transients in both directions, making it highly versatile for various circuit applications.

Diode Element Material: SILICON

Silicon diode elements offer excellent electrical characteristics and reliability, contributing to the overall robustness of the transient suppression device.

Technical Specifications

Transient Suppression Devices ESDAULC6-3BF2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

9.2 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PBGA-B4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

ESDAULC6-3BF2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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