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ESDARF01-1BM2

STMicroelectronics

ESDARF01-1BM2 by STMicroelectronics

STMicroelectronics ESDARF01-1BM2 is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 1V breakdown voltage. It features AVALANCHE technology, nickel palladium gold finish, and can withstand peak reflow temperature of 260 °C for 30s. Ideal for transient suppression in surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,421 parts In-Stock

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USA . 6,282 parts In-Stock

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Anansix

USA . 2,631 parts In-Stock

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2,631

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Digiode

USA . 1,352 parts In-Stock

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A&K Electronics

USA . 70 parts In-Stock

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70

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Bristol Electronics

USA . 70 parts In-Stock

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70

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Cogito LLC

Ukraine . 7 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 846 parts In-Stock

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$0.175

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$0.157

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846

$0.175

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$0.157

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MKK Technologies

India . 2,247 parts In-Stock

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$0.329

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$0.329

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DigiPath Technology Company

USA . 2,247 parts In-Stock

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$0.329

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$0.329

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Native Components

USA . 569 parts In-Stock

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$1.035

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569

$1.035

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Northwest PG Solutions

USA . 294 parts In-Stock

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$1.138

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AZTECH Wire

Italy . 953 parts In-Stock

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$12.680

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,750 parts In-Stock

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Corphita

USA . 3,949 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,833 parts In-Stock

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3,833

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Parana Technologies

USA . 1,766 parts In-Stock

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$0.209

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$0.209

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Kepictronics

USA . 1,600 parts In-Stock

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Overview

Unlock the power of reliable transient suppression with the ESDARF01-1BM2 by STMicroelectronics. Crafted by a trusted manufacturer known for its top-notch quality, this surface-mount device is perfect for a variety of applications. Offering peace of mind with its bidirectional polarity and silicon diode element material, this TRANS VOLTAGE SUPPRESSOR DIODE utilizes cutting-edge avalanche technology to provide optimal protection. Trust in STMicroelectronics to deliver a high-performance solution that exceeds expectations and safeguards your electronic devices effectively.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on printed circuit boards, saving space and reducing assembly time.

Nominal Breakdown Voltage: 1 V

This low nominal breakdown voltage makes the device suitable for transient suppression and protection against voltage spikes within a narrow range, ensuring effective protection for sensitive components.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity, corrosion resistance, and solderability, ensuring reliable performance and durability of the device.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, the device can withstand reflow soldering processes without affecting its functionality or reliability.

Peak Reflow Temperature °C: 260

The device is designed to withstand peak reflow temperatures of up to 260 °C, ensuring compatibility with standard reflow soldering processes used in electronics manufacturing.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes allows for effective suppression of voltage spikes and transients, protecting connected components from damage and ensuring system integrity.

Technology: AVALANCHE

Avalanche technology enables the diode to handle high energy transient events by rapidly conducting excess current, providing robust protection against voltage surges and spikes.

Polarity: BIDIRECTIONAL

With bidirectional polarity, the device can protect against voltage transients in both directions, offering comprehensive protection for electronic circuits and components.

Diode Element Material: SILICON

Silicon diode element material ensures high reliability, fast response time, and low leakage current, making it an ideal choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices ESDARF01-1BM2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Nominal Breakdown Voltage:

1 V

Diode Element Material:

SILICON

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDARF01-1BM2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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