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ESDALC6V1-1BT2

STMicroelectronics

ESDALC6V1-1BT2 by STMicroelectronics

ESDALC6V1-1BT2 by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for surface mount applications. It features a max reverse power dissipation of 100 W, breakdown voltage of 8 V, and operates up to 125 °C. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,331 parts In-Stock

1+ parts

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4,331

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Digiode

USA . 3,518 parts In-Stock

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3,518

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Anansix

USA . 1,098 parts In-Stock

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1,098

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,249 parts In-Stock

1+ parts

$0.023

100+ parts

-

1k+ parts

$0.021

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1,249

$0.023

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$0.021

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MKK Technologies

India . 1,079 parts In-Stock

1+ parts

$0.043

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-

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1,079

$0.043

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DigiPath Technology Company

USA . 1,079 parts In-Stock

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$0.043

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-

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1,079

$0.043

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Andel Nordic

Denmark . 1,463 parts In-Stock

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$7.513

100+ parts

-

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$7.212

10k+ parts

$7.212

1,463

$7.513

-

$7.212

$7.212

AZTECH Wire

Italy . 646 parts In-Stock

1+ parts

$16.900

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646

$16.900

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Component Stockers USA

USA . 423 parts In-Stock

1+ parts

$99.990

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423

$99.990

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A-Z Elektronik GmbH

Germany . 2,850 parts In-Stock

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2,850

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Alle Elektronik GmbH

Germany . 1,900 parts In-Stock

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1,900

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Parana Technologies

USA . 1,322 parts In-Stock

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$0.028

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1,322

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$0.028

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Native Components

USA . 842 parts In-Stock

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842

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Corphita

USA . 325 parts In-Stock

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325

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Northwest PG Solutions

USA . 206 parts In-Stock

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206

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Perfect Parts

USA . 3 parts In-Stock

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Overview

Unlock unparalleled protection for your electronics with the ESDALC6V1-1BT2 from STMicroelectronics, a leader in innovative semiconductor solutions. This versatile transient suppression device ensures reliable performance across various applications, minimizing damage from voltage spikes and enhancing longevity. With its compact design and robust quality standards, trust STMicroelectronics to deliver unmatched durability and efficiency, safeguarding your investments seamlessly.

Feature Benefit Bullets

Config: SINGLE

A single configuration simplifies integration into various designs, making it an ideal choice for straightforward applications.

Surface Mount: YES

Surface Mount capability allows for reduced board space and facilitates automated assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high power dissipation capability, this device can handle peak transient events effectively, ensuring reliable performance.

Nominal Breakdown Voltage: 8 V

The nominal breakdown voltage provides effective clamping at a controlled level to protect sensitive components from voltage spikes.

Package Shape: RECTANGULAR

A rectangular package shape facilitates efficient layout on PCBs, enabling better space utilization.

No. of Terminals: 2

Having only two terminals simplifies connections and reduces the likelihood of wiring errors in applications.

Package Style (Meter): CHIP CARRIER

The chip carrier style ensures a low profile and adaptability in various compact electronic applications.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability and performance in demanding environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This terminal finish offers excellent corrosion resistance and solderability, enhancing the longevity and reliability of connections.

Terminal Position: BOTTOM

Bottom terminal positioning aids in thermal efficiency and provides a stable connection for mounting.

Minimum Breakdown Voltage: 6.1 V

The minimum breakdown voltage allows for effective protection of circuits operating under varying voltages.

Maximum Time At Peak Reflow Temperature: 30 s

A short maximum time at peak reflow ensures compatibility with modern soldering processes without damaging the component.

Peak Reflow Temperature: 260 C

High reflow temperature capability enables compatibility with lead-free soldering and robust assembly processes.

Maximum Breakdown Voltage: 8 V

The maximum breakdown voltage aligns with protecting sensitive electronics, ensuring no over-voltage occurs in operation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor, this diode effectively safeguards against voltage spikes, protecting circuit integrity.

Technology: AVALANCHE

Avalanche technology allows for rapid response to transients, providing excellent protection with minimal delay.

Terminal Form: NO LEAD

No lead configuration simplifies sizing and makes the device more compact, facilitating smaller designs.

Moisture Sensitivity Level (MSL): 3

With MSL 3, this device requires proper handling to maintain performance, but is versatile for many applications.

Polarity: BIDIRECTIONAL

Bidirectional capability allows for protection against both positive and negative voltage spikes, enhancing circuit safety.

Diode Element Material: SILICON

Silicon material is known for its semiconductor properties, providing reliable performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESDALC6V1-1BT2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.1 V

Nominal Breakdown Voltage:

8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDALC6V1-1BT2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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