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ESDA6V1S3RL

STMicroelectronics

ESDA6V1S3RL by STMicroelectronics

ESDA6V1S3RL by STMicroelectronics is a Transient Suppression Device with 18 ELEMENTS in COMMON ANODE config. It has a Breakdown Voltage of 6.65 V and Max Non Repetitive Peak Reverse Power Dissipation of 200 W. Ideal for protecting electronic circuits from voltage spikes, it features a UNIDIRECTIONAL AVALANCHE TRANS VOLTAGE SUPPRESSOR DIODE technology in a SMALL OUTLINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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80,000

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Vyrian

USA . 12,017 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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12,017

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Anansix

USA . 807 parts In-Stock

1+ parts

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100+ parts

-

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807

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Digiode

USA . 457 parts In-Stock

1+ parts

-

100+ parts

-

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457

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NexGen Digital

USA . 1 parts In-Stock

1+ parts

-

100+ parts

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,882 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$0.050

10k+ parts

-

1,882

$0.055

-

$0.050

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MKK Technologies

India . 302 parts In-Stock

1+ parts

$0.104

100+ parts

-

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302

$0.104

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DigiPath Technology Company

USA . 302 parts In-Stock

1+ parts

$0.104

100+ parts

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302

$0.104

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-

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AZTECH Wire

Italy . 70 parts In-Stock

1+ parts

$19.250

100+ parts

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70

$19.250

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Perfect Parts

USA . 3,412 parts In-Stock

1+ parts

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3,412

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Corphita

USA . 1,870 parts In-Stock

1+ parts

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1,870

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Northwest PG Solutions

USA . 1,598 parts In-Stock

1+ parts

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1,598

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Parana Technologies

USA . 1,291 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

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1,291

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$0.066

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Native Components

USA . 293 parts In-Stock

1+ parts

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293

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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Speed Components Ltd (Excess)

Israel . 12 parts In-Stock

1+ parts

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12

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Overview

Enhance the protection of your electronics with the ESDA6V1S3RL by STMicroelectronics. With a reputation for top-notch quality and reliability, STMicroelectronics delivers a transient suppression device that offers peace of mind against voltage spikes and surges. Ideal for a wide range of applications, this product ensures your electronics are safeguarded from potential damage. Trust in the value, benefits, and advantages that STMicroelectronics brings to the table with the ESDA6V1S3RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body.

Config: COMMON ANODE, 18 ELEMENTS

Efficient configuration for transient suppression across multiple elements.

Surface Mount: YES

Easy to install and suitable for automated assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

High power dissipation capability for effective suppression of transient voltage spikes.

Nominal Breakdown Voltage: 6.65 V

Stable breakdown voltage to protect against overvoltage conditions.

Package Shape: RECTANGULAR

Space-efficient shape for compact circuit design.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Corrosion-resistant finish for long-term reliability.

Terminal Position: DUAL

Provides flexibility in connection options.

Minimum Breakdown Voltage: 6.1 V

Ensures protection at lower voltages as well.

Peak Reflow Temperature: 260 °C

Can withstand high-temperature reflow soldering processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression applications.

Technology: AVALANCHE

Avalanche technology allows for faster and more efficient suppression of transient spikes.

Moisture Sensitivity Level (MSL): 3

Suitable for a variety of environmental conditions in electronic systems.

Polarity: UNIDIRECTIONAL

Unidirectional diode for consistent voltage suppression in one direction.

Diode Element Material: SILICON

Silicon material for reliable diode performance.

Technical Specifications

Transient Suppression Devices ESDA6V1S3RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.1 V

Nominal Breakdown Voltage:

6.65 V

Config:

COMMON ANODE, 18 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

18

No. of Terminals:

20

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDA6V1S3RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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