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ESDA6V1-5T6

STMicroelectronics

ESDA6V1-5T6 by STMicroelectronics

ESDA6V1-5T6 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection. It features a breakdown voltage of 6.65 V, max power dissipation of 35 W, and operates up to 125 °C. Ideal for safeguarding sensitive electronics from voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,559 parts In-Stock

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2,559

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Digiode

USA . 2,232 parts In-Stock

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2,232

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Anansix

USA . 1,559 parts In-Stock

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1,559

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,365 parts In-Stock

1+ parts

$0.180

100+ parts

-

1k+ parts

$0.162

10k+ parts

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1,365

$0.180

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$0.162

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MKK Technologies

India . 1,539 parts In-Stock

1+ parts

$0.339

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-

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1,539

$0.339

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DigiPath Technology Company

USA . 1,539 parts In-Stock

1+ parts

$0.339

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-

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1,539

$0.339

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AZTECH Wire

Italy . 523 parts In-Stock

1+ parts

$14.440

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523

$14.440

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Component Stockers USA

USA . 280 parts In-Stock

1+ parts

$99.990

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280

$99.990

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Native Components

USA . 775 parts In-Stock

1+ parts

$6,993.440

100+ parts

$6,853.571

1k+ parts

$6,783.637

10k+ parts

$6,713.702

775

$6,993.440

$6,853.571

$6,783.637

$6,713.702

Northwest PG Solutions

USA . 1,021 parts In-Stock

1+ parts

$7,692.784

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1,021

$7,692.784

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A-Z Elektronik GmbH

Germany . 6,963 parts In-Stock

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Perfect Parts

USA . 6,160 parts In-Stock

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6,160

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Alle Elektronik GmbH

Germany . 4,642 parts In-Stock

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4,642

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Corphita

USA . 2,813 parts In-Stock

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2,813

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Parana Technologies

USA . 594 parts In-Stock

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$0.216

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594

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$0.216

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Overview

Elevate your designs with the ESDA6V1-5T6 from STMicroelectronics, a trusted leader in semiconductor innovation. This advanced transient suppression device ensures robust protection for sensitive electronics against voltage spikes, enhancing reliability and longevity. Its compact surface-mount design fits seamlessly into diverse applications, while STMicroelectronics’ commitment to quality guarantees performance you can depend on. Choose the ESDA6V1-5T6 for peace of mind and superior value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making the device suitable for various applications.

Config: COMMON ANODE, 5 ELEMENTS

This configuration allows for efficient implementation in circuits, particularly in protecting multiple lines from transients.

Surface Mount: YES

Surface mount technology enables compact design and efficient automated assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 35 W

The high power dissipation rating ensures that the device can handle unexpected transients without failure.

Nominal Breakdown Voltage: 6.65 V

A precise nominal breakdown voltage provides reliable protection at expected operating voltages.

Package Shape: RECTANGULAR

The rectangular shape offers efficient land usage on PCBs, facilitating better space management in device design.

No. of Terminals: 6

Having six terminals allows for versatile connections suitable for complex circuit designs.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging supports ease of integration into existing systems, promoting quick deployment.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature guarantees reliable performance in demanding environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The premium terminal finish enhances solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates excellent thermal performance and space-efficient designs.

Minimum Breakdown Voltage: 6.1 V

The low minimum breakdown voltage ensures sensitive circuits are protected without false triggering.

Maximum Time At Peak Reflow Temperature (s): 30

A controlled reflow time minimizes thermal stress during assembly, improving component lifespan.

Peak Reflow Temperature °C: 260

The high peak reflow temperature compatibility ensures that the device can withstand modern soldering processes.

Maximum Breakdown Voltage: 7.2 V

A maximum breakdown voltage limit provides a safety margin for transient suppression, enhancing circuit protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor, this diode effectively clamps voltage spikes, safeguarding sensitive electronics.

Technology: AVALANCHE

Avalanche technology allows for rapid response to voltage surges, providing immediate protection against transients.

Terminal Form: NO LEAD

No lead design contributes to environmental benefits and allows for finer pitch layouts in compact designs.

No. of Elements: 5

Five elements enhance transient suppression capabilities, making this device suitable for high-demand applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies circuit design for applications where reverse voltage protection is not necessary.

Diode Element Material: SILICON

Silicon material ensures effective clamping and reliable behavior over a wide range of operating conditions.

Technical Specifications

Transient Suppression Devices ESDA6V1-5T6 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.1 V

Nominal Breakdown Voltage:

6.65 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

35 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDA6V1-5T6 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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