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ESDA14V2-1BF3

STMicroelectronics

ESDA14V2-1BF3 by STMicroelectronics

ESDA14V2-1BF3 by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for surface mount applications. It features a breakdown voltage of 16.1 V, max reverse power dissipation of 50 W, and operates b/w -40 °C to 125°C. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

$0.450

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 12,815 parts In-Stock

1+ parts

$0.450

100+ parts

$0.174

1k+ parts

$0.116

10k+ parts

$0.091

12,815

$0.450

$0.174

$0.116

$0.091

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 953 parts In-Stock

1+ parts

$0.428

100+ parts

-

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-

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953

$0.428

-

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-

Chip Stock

USA . 16,500 parts In-Stock

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16,500

-

-

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Vyrian

USA . 4,671 parts In-Stock

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4,671

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Anansix

USA . 759 parts In-Stock

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759

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Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.112

100+ parts

$0.102

1k+ parts

$0.092

10k+ parts

-

3,000

$0.112

$0.102

$0.092

-

Corohmni

South Africa . 20 parts In-Stock

1+ parts

$0.113

100+ parts

-

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-

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20

$0.113

-

-

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IDEA Electronic Components Group

UK . 1,784 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

$0.135

10k+ parts

-

1,784

$0.150

-

$0.135

-

MKK Technologies

India . 762 parts In-Stock

1+ parts

$0.282

100+ parts

-

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762

$0.282

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DigiPath Technology Company

USA . 762 parts In-Stock

1+ parts

$0.282

100+ parts

-

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762

$0.282

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Corphita

USA . 2,502 parts In-Stock

1+ parts

$0.405

100+ parts

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2,502

$0.405

-

-

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Component Stockers USA

USA . 95 parts In-Stock

1+ parts

$0.420

100+ parts

$0.150

1k+ parts

-

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95

$0.420

$0.150

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Perfect Parts

USA . 111,643 parts In-Stock

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111,643

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Infinite Electronics LLP (Excess)

. 31,539 parts In-Stock

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31,539

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Formix International (Excess)

India . 31,535 parts In-Stock

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31,535

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Assy Fe

Spain . 16,300 parts In-Stock

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16,300

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A-Z Elektronik GmbH

Germany . 4,548 parts In-Stock

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4,548

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Alle Elektronik GmbH

Germany . 3,032 parts In-Stock

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3,032

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Northwest PG Solutions

USA . 2,008 parts In-Stock

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2,008

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Native Components

USA . 546 parts In-Stock

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546

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Parana Technologies

USA . 46 parts In-Stock

1+ parts

-

100+ parts

$0.179

1k+ parts

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46

-

$0.179

-

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Overview

Protect your circuits with the ESDA14V2-1BF3 from STMicroelectronics, where quality meets reliability. Designed for optimal transient suppression, this robust device shields sensitive components from voltage spikes, ensuring uninterrupted performance in diverse applications. With a compact surface mount design and exceptional thermal stability, it’s perfect for automotive, industrial, or consumer electronics. Trust in STMicroelectronics' expertise for unmatched durability and peace of mind!

Feature Benefit Bullets

Config: SINGLE

The single configuration ensures simplicity and ease of integration, making it an ideal choice for various applications.

Surface Mount: YES

Being surface mount compatible allows for efficient assembly and saves space on PCBs, making it suitable for compact designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 50 W

With a high power dissipation capability, this device can handle transient events without failure, enhancing system reliability.

Nominal Breakdown Voltage: 16.1 V

The 16.1 V nominal voltage provides effective voltage clamping, protecting sensitive components from over-voltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape provides a stable and effective mounting solution for various applications.

No. of Terminals: 2

With just two terminals, the device simplifies integration and minimizes the complexity of circuit design.

Package Style (Meter): GRID ARRAY

The grid array package style allows for efficient thermal management and improved electrical performance.

Maximum Operating Temperature: 125 °C

A high operating temperature rating ensures the device can function effectively in demanding environments.

Minimum Operating Temperature: -40 °C

A low operating temperature ensures reliable performance in extreme cold conditions, making it versatile for various applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides excellent solderability and ensures long-term reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal positioning enables effective heat dissipation and reliable connections in surface mount applications.

Minimum Breakdown Voltage: 14.2 V

A minimum breakdown voltage of 14.2 V ensures effective clamping under transient conditions, enhancing protection.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds allows for effective soldering without damaging sensitive components.

Peak Reflow Temperature: 260 °C

This high peak reflow temperature capability enables compatibility with modern soldering processes in electronics manufacturing.

Maximum Breakdown Voltage: 18 V

The maximum breakdown voltage of 18 V ensures that the device can handle sudden voltage spikes safely.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a transient voltage suppressor diode, it is specifically designed to protect sensitive circuitry from voltage transients.

Technology: AVALANCHE

Utilizing avalanche technology allows for fast response times to voltage surges, offering superior protection.

Terminal Form: BALL

Ball terminal forms facilitate easy mounting and improved connection reliability in high-density applications.

Maximum Repetitive Peak Reverse Voltage: 12 V

With a maximum repetitive peak reverse voltage of 12 V, it protects against recurring transient over-voltages.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for comprehensive protection in AC and DC applications, broadening its usability.

Diode Element Material: SILICON

The use of silicon in diode element construction ensures excellent electrical properties and durability under various conditions.

Technical Specifications

Transient Suppression Devices ESDA14V2-1BF3 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

18 V

Minimum Breakdown Voltage:

14.2 V

Nominal Breakdown Voltage:

16.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBGA-B2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

50 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDA14V2-1BF3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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