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E-L6210

STMicroelectronics

E-L6210 by STMicroelectronics

E-L6210 by STMicroelectronics is a bridge rectifier diode with a max output current of 2 A and operates b/w 0 °C to 70°C. It features a compact, in-line package with 16 terminals and offers a min breakdown voltage of 50 V. Ideal for power conversion applications, it utilizes Schottky technology for efficiency.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,493 parts In-Stock

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10,493

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Anansix

USA . 2,798 parts In-Stock

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2,798

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Digiode

USA . 2,621 parts In-Stock

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2,621

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Chip Stock

USA . 142 parts In-Stock

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142

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Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,340 parts In-Stock

1+ parts

$0.018

100+ parts

-

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$0.017

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1,340

$0.018

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$0.017

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MKK Technologies

India . 867 parts In-Stock

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$0.035

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867

$0.035

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DigiPath Technology Company

USA . 867 parts In-Stock

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$0.035

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867

$0.035

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Native Components

USA . 766 parts In-Stock

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$1.911

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766

$1.911

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Northwest PG Solutions

USA . 236 parts In-Stock

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$2.102

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236

$2.102

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AZTECH Wire

Italy . 1,024 parts In-Stock

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$11.160

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$11.160

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Component Stockers USA

USA . 786 parts In-Stock

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$99.990

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786

$99.990

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Alle Elektronik GmbH

Germany . 4,322 parts In-Stock

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Corphita

USA . 4,206 parts In-Stock

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Parana Technologies

USA . 1,091 parts In-Stock

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$0.022

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$0.022

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A-Z Elektronik GmbH

Germany . 288 parts In-Stock

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Kepictronics

USA . 87 parts In-Stock

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Perfect Parts

USA . 6 parts In-Stock

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Overview

Unlock unparalleled efficiency with the E-L6210 from STMicroelectronics, a leader in innovative semiconductor solutions. This robust bridge rectifier diode is designed for superior performance across a wide range of applications, ensuring reliable power management and energy conversion. With its durable construction and advanced Schottky technology, customers benefit from enhanced thermal stability and lower power losses, making it an essential choice for modern electronics. Trust STMicroelectronics for quality that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliable performance, making the product suitable for various applications.

Config: 2 BANKS, BRIDGE, 4 ELEMENTS

The bridge configuration allows efficient conversion of AC to DC, making it ideal for power supply applications.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient space utilization on PCBs, facilitating easier integration into designs.

No. of Terminals: 16

With 16 terminals, this bridge rectifier can handle more complex circuits and higher connections, enhancing versatility.

Package Style (Meter): IN-LINE

An in-line package style supports easy mounting on PCB layouts, improving assembly efficiency.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this product can operate in a wide range of environments without thermal failure.

Minimum Operating Temperature: 0 °C

The product can function effectively from 0 °C, making it suitable for applications in cooler climates.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish ensures excellent conductivity and corrosion resistance, enhancing reliability over time.

Terminal Position: DUAL

A dual terminal position allows for flexible circuit design, catering to various configuration needs.

Minimum Breakdown Voltage: 50 V

A minimum breakdown voltage of 50 V ensures safe operation under high-voltage conditions, making it a reliable choice.

Diode Type: BRIDGE RECTIFIER DIODE

As a bridge rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), suitable for power supply applications.

Maximum Forward Voltage (VF): 0.8 V

A low maximum forward voltage of 0.8 V minimizes losses during operation, improving overall efficiency.

Maximum Output Current: 2 A

The ability to handle a maximum output current of 2 A makes this product suitable for mid-power applications.

Technology: SCHOTTKY

Using Schottky technology allows for fast switching speeds, enhancing performance in high-frequency applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form promotes robust connections, making it suitable for applications requiring solid electrical integrity.

No. of Elements: 8

Having 8 elements contributes to the rectification process, which improves performance in converting AC to DC.

Maximum Repetitive Peak Reverse Voltage: 50 V

This specification guarantees reliable operation even under reversed conditions, which is critical for power electronics.

Diode Element Material: SILICON

Silicon as the diode element material offers a good balance between performance, cost, and reliability.

Technical Specifications

Bridge Rectifier Diodes E-L6210 attributes and parameters. Explore more Bridge Rectifier Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

50 V

Config:

2 BANKS, BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

8

No. of Phases:

1

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

E-L6210 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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