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BZW50-100BRL

STMicroelectronics

BZW50-100BRL by STMicroelectronics

BZW50-100BRL by STMicroelectronics is a bidirectional transient voltage suppressor diode with a max reverse power dissipation of 5000 W and breakdown voltage of 111 V. It operates up to 175 °C, ideal for protecting sensitive electronics from voltage spikes. Its isolated case connection ensures reliable performance in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Avnet

USA . 1,000 parts In-Stock

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1,000

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Vyrian

USA . 5,400 parts In-Stock

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5,400

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Digiode

USA . 2,521 parts In-Stock

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2,521

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Anansix

USA . 753 parts In-Stock

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Native Components

USA . 499 parts In-Stock

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$0.147

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$0.141

499

$0.147

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$0.141

Northwest PG Solutions

USA . 59 parts In-Stock

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$0.161

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$0.142

59

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IDEA Electronic Components Group

UK . 1,352 parts In-Stock

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$0.165

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$0.148

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$0.148

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MKK Technologies

India . 472 parts In-Stock

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$0.310

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472

$0.310

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DigiPath Technology Company

USA . 472 parts In-Stock

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$0.310

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472

$0.310

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AZTECH Wire

Italy . 847 parts In-Stock

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$20.570

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$20.570

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Corphita

USA . 3,553 parts In-Stock

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Parana Technologies

USA . 2,268 parts In-Stock

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$0.197

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$0.197

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Overview

Elevate your designs with the BZW50-100BRL from STMicroelectronics, a top-tier transient suppression device that ensures your circuits thrive under pressure. With its robust construction and exceptional reliability, this diode protects sensitive components from voltage spikes, extending product life and enhancing performance. Trust in ST's renowned expertise to deliver unmatched quality, making the BZW50-100BRL the ideal choice for automotive, industrial, and consumer applications. Secure your innovations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and resistance to environmental factors, ensuring durability and longevity in various applications.

Config: SINGLE

A single configuration simplifies integration into circuits, making it an efficient choice for designers.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5000 W

This high power dissipation capability indicates the ability to handle short-term surges, protecting sensitive components from voltage spikes.

Package Shape: ROUND

The round shape allows for easy mounting and configuration within various electronic designs.

No. of Terminals: 2

Two terminals facilitate straightforward connectivity and integration into existing circuit designs.

Package Style (Meter): LONG FORM

The long form packaging is conducive for applications that require flexible lead lengths for better positioning.

Maximum Operating Temperature: 175 °C

This high operating temperature ensures reliable performance in demanding environments where other components might fail.

Terminal Finish: MATTE TIN

Matte tin provides excellent solderability and corrosion resistance, enhancing the reliability of connections.

Terminal Position: AXIAL

AXIAL positioning allows for efficient space utilization on the PCB, making it ideal for compact electronic designs.

Case Connection: ISOLATED

Isolation ensures that the device operates without interference from surrounding components, enhancing the overall safety of the circuit.

Maximum Power Dissipation: 6.5 W

This power dissipation capability allows the device to operate effectively without overheating during normal conditions.

Minimum Breakdown Voltage: 111 V

A minimum breakdown voltage of 111V ensures effective protection for circuits operating below this voltage threshold.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies compliance with safety standards, providing confidence in the product's reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode provides transient protection which is crucial in safeguarding sensitive electronic components from voltage spikes.

Technology: AVALANCHE

Avalanche technology allows for rapid clamping and excellent response to transient voltages, enhancing protection efficiency.

Terminal Form: WIRE

Wire terminals enable flexible connectivity options in circuit designs, which can be critical for specific applications or layouts.

Maximum Repetitive Peak Reverse Voltage: 100 V

This voltage rating indicates the capability to handle repetitive voltage spikes, making it suitable for applications prone to such events.

Polarity: BIDIRECTIONAL

Bidirectional operation allows for versatile application in AC and DC environments, enhancing the product's usability.

Maximum Clamping Voltage: 179 V

The clamping voltage specifies the maximum voltage the device will allow during a transient event, ensuring sensitive components are well protected.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material that ensures reliable and stable performance across a range of applications.

Technical Specifications

Transient Suppression Devices BZW50-100BRL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

111 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

179 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

5000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BZW50-100BRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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