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BZW06-37BRL

STMicroelectronics

BZW06-37BRL by STMicroelectronics

BZW06-37BRL by STMicroelectronics is a single transient suppression device with 600W peak power dissipation and 43V breakdown voltage. Ideal for bidirectional protection in applications requiring high clamping voltage up to 76.8V, such as UL recognized systems needing isolated case connection.

Median Price

$0.259

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

EBV Elektronik

Germany . 696,000 parts In-Stock

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696,000

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Arrow

USA . 6,000 parts In-Stock

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$0.142

6,000

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$0.142

Rochester

USA . 6,000 parts In-Stock

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-

100+ parts

$0.259

1k+ parts

$0.215

10k+ parts

$0.191

6,000

-

$0.259

$0.215

$0.191

Verical

USA . 6,000 parts In-Stock

1+ parts

-

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$0.268

6,000

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$0.268

Distributors (In-Stock)

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Vyrian

USA . 2,382 parts In-Stock

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2,382

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Anansix

USA . 694 parts In-Stock

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694

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Digiode

USA . 286 parts In-Stock

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286

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,128 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

$0.060

10k+ parts

-

2,128

$0.066

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$0.060

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MKK Technologies

India . 1,539 parts In-Stock

1+ parts

$0.125

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1,539

$0.125

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DigiPath Technology Company

USA . 1,539 parts In-Stock

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$0.125

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1,539

$0.125

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Native Components

USA . 444 parts In-Stock

1+ parts

$0.183

100+ parts

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$0.176

444

$0.183

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$0.176

Northwest PG Solutions

USA . 1 parts In-Stock

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$0.201

100+ parts

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$0.178

1

$0.201

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$0.178

AZTECH Wire

Italy . 826 parts In-Stock

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$18.060

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826

$18.060

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Perfect Parts

USA . 598,080 parts In-Stock

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598,080

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Authorized Procurement Solutions

USA . 54,000 parts In-Stock

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54,000

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Lixinc

USA . 8,446 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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6,000

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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6,000

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Parana Technologies

USA . 1,218 parts In-Stock

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$0.079

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1,218

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$0.079

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Corphita

USA . 130 parts In-Stock

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130

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Overview

Discover the BZW06-37BRL by STMicroelectronics, a top-of-the-line Transient Suppression Device designed to protect your electronic equipment from voltage spikes and surges. With a maximum power dissipation of 600W and a nominal breakdown voltage of 43V, this diode offers unparalleled protection for your devices. STMicroelectronics, known for its high-quality components, ensures that you are getting a reliable and durable product. From industrial machinery to consumer electronics, the BZW06-37BRL is essential for safeguarding your valuable equipment. Experience peace of mind knowing that your devices are protected with this advanced technology from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the device, making it suitable for various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability ensures that the device can handle sudden power surges effectively without being damaged.

Nominal Breakdown Voltage: 43 V

The specified breakdown voltage ensures that the device can protect sensitive components by clamping voltages above this threshold.

Maximum Reverse Current: 5 uA

The low reverse current indicates efficient operation and minimal leakage, contributing to the overall reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient voltage suppression, making it an ideal choice for protection against voltage spikes.

Technology: AVALANCHE

The avalanche technology used in this device allows it to handle high energy transients effectively, ensuring reliable performance under surge conditions.

Technical Specifications

Transient Suppression Devices BZW06-37BRL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

45.2 V

Minimum Breakdown Voltage:

40.9 V

Nominal Breakdown Voltage:

43 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

76.8 V

Config:

SINGLE

Minimum Diode Capacitance:

425 pF

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

1.7 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Reverse Current:

5 uA

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BZW06-37BRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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