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BZW04-7V8BRL

STMicroelectronics

BZW04-7V8BRL by STMicroelectronics

BZW04-7V8BRL by STMicroelectronics is a single transient suppression device with 400W peak power dissipation, 9.1V breakdown voltage, and 50uA max reverse current. It is an UL recognized bidirectional trans voltage suppressor diode suitable for applications requiring avalanche technology in protecting against voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,170 parts In-Stock

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4,170

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Anansix

USA . 1,152 parts In-Stock

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1,152

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Digiode

USA . 221 parts In-Stock

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221

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 538 parts In-Stock

1+ parts

$0.009

100+ parts

-

1k+ parts

$0.008

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538

$0.009

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$0.008

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MKK Technologies

India . 1,407 parts In-Stock

1+ parts

$0.017

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-

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1,407

$0.017

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DigiPath Technology Company

USA . 1,407 parts In-Stock

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$0.017

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1,407

$0.017

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$0.059

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1,000

$0.059

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AZTECH Wire

Italy . 159 parts In-Stock

1+ parts

$17.960

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159

$17.960

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Component Stockers USA

USA . 244 parts In-Stock

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$99.990

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244

$99.990

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Corphita

USA . 3,372 parts In-Stock

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3,372

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Northwest PG Solutions

USA . 2,317 parts In-Stock

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$3.498

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2,317

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$3.498

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Parana Technologies

USA . 1,622 parts In-Stock

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$0.011

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1,622

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$0.011

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Native Components

USA . 520 parts In-Stock

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$3.462

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520

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$3.462

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Overview

Looking for reliable transient suppression devices? Look no further than the BZW04-7V8BRL by STMicroelectronics. With a maximum power dissipation of 1.7W and a nominal breakdown voltage of 9.1V, this product offers superior protection against voltage spikes. Perfect for applications where protecting sensitive electronics is crucial, this diode type trans voltage suppressor ensures peace of mind and reliable performance. Trust in the quality and expertise of STMicroelectronics to keep your electronics safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy materials provide durability and resistance to environmental factors, making the product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

High power dissipation capability ensures the device can handle sudden voltage spikes effectively, protecting connected equipment.

Nominal Breakdown Voltage: 9.1 V

The breakdown voltage of 9.1 V ensures effective suppression of voltage spikes above this threshold, safeguarding sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are specifically designed for transient voltage suppression, making them ideal for surge protection applications.

Technology: AVALANCHE

Avalanche technology allows for high power handling capacity and fast response times, enhancing the performance of the transient suppression device.

Technical Specifications

Transient Suppression Devices BZW04-7V8BRL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

9.55 V

Minimum Breakdown Voltage:

8.65 V

Nominal Breakdown Voltage:

9.1 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

17.1 V

Config:

SINGLE

Minimum Diode Capacitance:

1150 pF

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

1.7 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

7.8 V

Maximum Reverse Current:

50 uA

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BZW04-7V8BRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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