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BZW04-48RL

STMicroelectronics

BZW04-48RL by STMicroelectronics

STMicroelectronics BZW04-48RL is a 400W TRANS VOLTAGE SUPPRESSOR DIODE with 48V max repetitive peak reverse voltage. It has a low 5uA max reverse current and high clamping voltage of 100V, making it ideal for transient suppression in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,167

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-

-

-

Digiode

USA . 4,287 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,287

-

-

-

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Anansix

USA . 465 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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465

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,566 parts In-Stock

1+ parts

$0.180

100+ parts

-

1k+ parts

$0.162

10k+ parts

-

1,566

$0.180

-

$0.162

-

MKK Technologies

India . 2,020 parts In-Stock

1+ parts

$0.339

100+ parts

-

1k+ parts

-

10k+ parts

-

2,020

$0.339

-

-

-

DigiPath Technology Company

USA . 2,020 parts In-Stock

1+ parts

$0.339

100+ parts

-

1k+ parts

-

10k+ parts

-

2,020

$0.339

-

-

-

AZTECH Wire

Italy . 84 parts In-Stock

1+ parts

$21.720

100+ parts

-

1k+ parts

-

10k+ parts

-

84

$21.720

-

-

-

Component Stockers USA

USA . 223 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

223

$99.990

-

-

-

Corphita

USA . 2,839 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,839

-

-

-

-

Parana Technologies

USA . 840 parts In-Stock

1+ parts

-

100+ parts

$0.216

1k+ parts

-

10k+ parts

-

840

-

$0.216

-

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Native Components

USA . 305 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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305

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Northwest PG Solutions

USA . 260 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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260

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-

-

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Overview

Enhance the reliability of your electronic devices with the STMicroelectronics BZW04-48RL Transient Suppression Device. Manufactured by industry leader STMicroelectronics, this product offers superior quality and performance. Ideal for protecting sensitive components from voltage spikes, this diode is a must-have for any application where robust transient voltage protection is required. Trust in STMicroelectronics to deliver cutting-edge technology and unmatched value to meet all your protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring long-term reliability and performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Ability to handle high levels of power transient events without damage, making it suitable for protecting sensitive electronic equipment.

Maximum Reverse Current: 5 uA

Offers low reverse current, which is important for maintaining the operational efficiency of the device.

Package Shape: ROUND

Compact and easy to install in various electronic circuits or systems.

Maximum Operating Temperature: 175 °C

Can operate efficiently in high-temperature environments, ensuring reliability in diverse applications.

Maximum Power Dissipation: 1.7 W

Efficiently dissipates power to prevent overheating and damage to the device during transient events.

Minimum Breakdown Voltage: 53.2 V

Provides reliable protection by clamping down transient voltages above this threshold to prevent damage to sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, providing effective protection against voltage spikes and surges.

Polarity: UNIDIRECTIONAL

Protects against voltage spikes in one direction, ensuring safety and reliability of the equipment.

Diode Element Material: SILICON

Offers high efficiency and reliability in suppressing transient voltages, ensuring long-lasting protection for connected devices.

Technical Specifications

Transient Suppression Devices BZW04-48RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

53.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

100 V

Config:

SINGLE

Minimum Diode Capacitance:

320 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.7 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

48 V

Maximum Reverse Current:

5 uA

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BZW04-48RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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