Loading...

BZW04-213RL

STMicroelectronics

BZW04-213RL by STMicroelectronics

BZW04-213RL by STMicroelectronics is a unidirectional Trans Voltage Suppressor Diode with 213V max repetitive peak reverse voltage and 400W non-repetitive peak reverse power dissipation. It is designed for transient suppression applications, offering a low clamping voltage of 442V and high breakdown voltage of 237V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,964 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,964

-

-

-

-

Vyrian

USA . 4,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,062

-

-

-

-

ECAB

Sweden . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Anansix

USA . 136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

136

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,732 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

$0.055

10k+ parts

-

1,732

$0.061

-

$0.055

-

MKK Technologies

India . 1,351 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

1,351

$0.114

-

-

-

DigiPath Technology Company

USA . 1,351 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

1,351

$0.114

-

-

-

AZTECH Wire

Italy . 805 parts In-Stock

1+ parts

$11.200

100+ parts

-

1k+ parts

-

10k+ parts

-

805

$11.200

-

-

-

Component Stockers USA

USA . 258 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

258

$99.990

-

-

-

Native Components

USA . 356 parts In-Stock

1+ parts

$148.595

100+ parts

-

1k+ parts

-

10k+ parts

$142.651

356

$148.595

-

-

$142.651

Northwest PG Solutions

USA . 996 parts In-Stock

1+ parts

$163.455

100+ parts

-

1k+ parts

-

10k+ parts

-

996

$163.455

-

-

-

Corphita

USA . 4,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,031

-

-

-

-

Parana Technologies

USA . 1,294 parts In-Stock

1+ parts

-

100+ parts

$0.073

1k+ parts

-

10k+ parts

-

1,294

-

$0.073

-

-

Overview

Enhance the reliability of your electronic devices with the BZW04-213RL from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top quality and performance in their Transient Suppression Devices. Ideal for protecting sensitive components from voltage spikes, this product offers peace of mind and longevity to your equipment. Trust STMicroelectronics to deliver superior technology and innovation that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the packaging ensures durability and resistance to environmental factors, making it a reliable choice for transient suppression applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

With a high maximum non-repetitive peak reverse power dissipation, this product can effectively handle transient surges and protect electronic components from damage.

Maximum Reverse Current: 5 uA

The low maximum reverse current indicates minimal leakage, ensuring efficient transient suppression and reliable performance.

Maximum Clamping Voltage: 442 V

The high maximum clamping voltage ensures that voltage spikes are limited to a safe level, providing effective protection for sensitive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures fast response time and effective suppression of voltage transients, making it an ideal choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices BZW04-213RL attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

237 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

442 V

Config:

SINGLE

Minimum Diode Capacitance:

100 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.7 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

213 V

Maximum Reverse Current:

5 uA

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BZW04-213RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20