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BAT54-09P6FILM

STMicroelectronics

BAT54-09P6FILM by STMicroelectronics

BAT54-09P6FILM by STMicroelectronics is a Schottky rectifier diode ideal for high-speed switching applications. It features a max reverse recovery time of 0.005 µs, operates from -40 °C to 150 °C, and supports up to 40 V peak reverse voltage. Its compact design ensures efficient performance in surface mount configurations.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,789 parts In-Stock

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Anansix

USA . 778 parts In-Stock

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Digiode

USA . 726 parts In-Stock

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IDEA Electronic Components Group

UK . 1,734 parts In-Stock

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$0.028

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$0.025

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MKK Technologies

India . 1,453 parts In-Stock

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$0.052

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DigiPath Technology Company

USA . 1,453 parts In-Stock

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Native Components

USA . 309 parts In-Stock

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$0.056

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$0.054

309

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$0.054

AZTECH Wire

Italy . 590 parts In-Stock

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$21.370

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Component Stockers USA

USA . 279 parts In-Stock

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$99.990

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Northwest PG Solutions

USA . 1,914 parts In-Stock

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Corphita

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Parana Technologies

USA . 1,327 parts In-Stock

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Perfect Parts

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Overview

Unlock exceptional performance with the BAT54-09P6FILM Schottky rectifier diode from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution perfect for high-speed switching applications. With low forward voltage and rapid response times, this diode enhances efficiency while minimizing energy loss. Elevate your designs with a component that ensures durability across diverse environments—empowering your projects with superior functionality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent insulation and reliability, making the product suitable for various environments.

Config: SEPARATE, 2 ELEMENTS

The separate 2 elements configuration allows for flexible circuit design, enabling efficient performance in a myriad of applications.

Surface Mount: YES

Being surface mount compatible enhances the ease of integration into automated assembly processes, resulting in reduced manufacturing costs.

Maximum Reverse Recovery Time: 0.005 us

The low reverse recovery time minimizes switching losses, making it ideal for high-frequency applications where efficiency is paramount.

Maximum Reverse Current: 100 uA

A low maximum reverse current indicates minimal leakage, ensuring that the device operates efficiently and contributes to overall system reliability.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, allowing for compact designs and reducing the overall footprint of the circuit.

Reverse Test Voltage: 30 V

With a reverse test voltage of 30 V, the product is robust enough to handle high-stress situations in demanding applications.

No. of Terminals: 6

Having six terminals enhances connection versatility, providing multiple integration options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for efficient space-saving designs while maintaining performance, perfect for compact devices.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature make this diode suitable for operation in challenging thermal conditions, enhancing the reliability of your applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this diode can be deployed in extreme cold environments, ensuring versatility across different applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, contributing to the longevity and performance of the product.

Terminal Position: DUAL

Dual terminal positioning offers configuration flexibility, aiding in complex circuit layouts and simplifying the design process.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC, making it an essential component in power supply applications.

Maximum Forward Voltage (VF): 0.24 V

A low forward voltage drop enhances the efficiency of power conversion, reducing energy losses during operation.

Maximum Output Current: 0.3 A

The ability to handle up to 0.3 A of output current makes this diode suitable for a variety of applications, balancing performance and size.

Technology: SCHOTTKY

Schottky technology allows for fast switching speeds and low forward voltage drop, improving efficiency in power management applications.

Terminal Form: FLAT

Flat terminal form provides ease of mounting and soldering, enhancing the overall reliability of the connections in electronic assemblies.

No. of Elements: 2

With two active elements, this product can efficiently handle larger currents and voltages, making it a robust choice for diverse applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

The high repetitive peak reverse voltage rating ensures that this diode can withstand significant voltage fluctuations, improving system durability.

Diode Element Material: SILICON

Silicon as a diode element material provides excellent thermal stability and reliability, key for the performance of electronic devices.

Technical Specifications

Diodes & Rectifiers BAT54-09P6FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.005 us

Reverse Test Voltage:

30 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT54-09P6FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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