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BAT41WFILM

STMicroelectronics

BAT41WFILM by STMicroelectronics

BAT41WFILM by STMicroelectronics is a Schottky rectifier diode in a small outline package, ideal for compact applications. It features a max forward voltage of 0.45V, supports up to 200mA output current, and operates at temperatures up to 150 °C. Perfect for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,155 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,155

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-

-

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Digiode

USA . 4,692 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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4,692

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Anansix

USA . 2,812 parts In-Stock

1+ parts

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100+ parts

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2,812

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 527 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

$0.126

10k+ parts

-

527

$0.140

-

$0.126

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MKK Technologies

India . 1,317 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

10k+ parts

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1,317

$0.263

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DigiPath Technology Company

USA . 1,317 parts In-Stock

1+ parts

$0.263

100+ parts

-

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10k+ parts

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1,317

$0.263

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-

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AZTECH Wire

Italy . 692 parts In-Stock

1+ parts

$13.690

100+ parts

-

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692

$13.690

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Corphita

USA . 3,473 parts In-Stock

1+ parts

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3,473

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Northwest PG Solutions

USA . 2,234 parts In-Stock

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2,234

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Parana Technologies

USA . 2,023 parts In-Stock

1+ parts

-

100+ parts

$0.167

1k+ parts

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2,023

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$0.167

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Native Components

USA . 892 parts In-Stock

1+ parts

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892

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Overview

Elevate your designs with the BAT41WFILM from STMicroelectronics, a premium Schottky rectifier diode that combines reliability and efficiency for a wide range of applications. Crafted with precision, this surface mount component ensures seamless integration into your projects while delivering exceptional performance even in demanding conditions. Trust in STMicroelectronics' legacy of innovation to provide you with superior quality products that enhance system longevity and reduce energy loss—perfect for both consumer electronics and industrial uses.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and protection against environmental factors, making the diode reliable in various applications.

Configuration: SINGLE

A single configuration simplifies the design requirements for customers, allowing for easier integration into circuits.

Surface Mount: YES

Being surface mount compatible allows for more compact designs and efficient manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, enabling better layout flexibility for designers.

Number of Terminals: 3

Three terminals facilitate versatile connections and enhance the device's functionality in a circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures minimal space usage on circuit boards, making it ideal for compact electronic devices.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures that the diode can function well in demanding environments without failure.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and ensures reliable electrical connections during assembly.

Terminal Position: DUAL

The dual terminal position allows for better layout flexibility in circuit designs, enhancing compatibility with various PCB configurations.

Maximum Time At Peak Reflow Temperature: 30 s

Limiting peak reflow exposure to 30 seconds minimizes thermal stress on the diode, extending its reliability.

Peak Reflow Temperature: 260 °C

This high peak reflow temperature capability ensures compatibility with modern soldering processes and enhances the product's usability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed for efficient power conversion, making it essential for various power supply applications.

Maximum Forward Voltage (VF): 0.45 V

Low forward voltage drop results in higher efficiency and less power loss, contributing to overall system energy savings.

Maximum Output Current: 0.2 A

An output current rating of 0.2 A makes this diode suitable for a range of applications requiring moderate current handling.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, making this diode ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form provides easy soldering and improves mechanical stability in PCB assemblies.

Maximum Repetitive Peak Reverse Voltage: 100 V

A peak reverse voltage of 100 V ensures robustness in applications where voltage spikes may occur, protecting the circuit.

Maximum Non-Repetitive Peak Forward Current: 1 A

The ability to handle up to 1 A peak current makes this diode capable of tolerating transient events without damage.

Diode Element Material: SILICON

Silicon as a material ensures reliable performance and availability in the market, making this diode widely applicable and trusted.

Technical Specifications

Diodes & Rectifiers BAT41WFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT41WFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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