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BAT41SWFILM

STMicroelectronics

BAT41SWFILM by STMicroelectronics

BAT41SWFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.45 V and supports up to 200 mA output current. It features a compact surface mount design with a peak reflow temp of 260 °C. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,016 parts In-Stock

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5,016

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Digiode

USA . 4,239 parts In-Stock

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4,239

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Anansix

USA . 2,707 parts In-Stock

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2,707

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,366 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

$0.041

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2,366

$0.045

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$0.041

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MKK Technologies

India . 2,029 parts In-Stock

1+ parts

$0.085

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2,029

$0.085

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DigiPath Technology Company

USA . 2,029 parts In-Stock

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$0.085

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2,029

$0.085

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AZTECH Wire

Italy . 218 parts In-Stock

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$17.710

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218

$17.710

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Component Stockers USA

USA . 395 parts In-Stock

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$99.990

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395

$99.990

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Corphita

USA . 4,753 parts In-Stock

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4,753

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A-Z Elektronik GmbH

Germany . 2,250 parts In-Stock

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2,250

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Northwest PG Solutions

USA . 2,024 parts In-Stock

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Native Components

USA . 811 parts In-Stock

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811

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Parana Technologies

USA . 807 parts In-Stock

1+ parts

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$0.054

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807

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$0.054

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Overview

Unlock superior performance with the BAT41SWFILM diode from STMicroelectronics, a trusted leader in semiconductor innovation. This compact and efficient Schottky rectifier is designed for high-speed switching applications, ensuring reliability and optimal thermal management. With its robust construction, it excels in consumer electronics, automotive systems, and power supplies, offering customers enhanced energy efficiency and lower operational costs. Elevate your designs with ST's commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures that the diode is protected from environmental factors, enhancing its longevity and reliability.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected design with a center tap allows for versatile applications in various circuits, making it adaptable and efficient.

Surface Mount: YES

Surface mount technology enables compact designs and allows for automated assembly, which can reduce manufacturing costs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of PCB space, accommodating high-density circuit designs.

No. of Terminals: 3

With three terminals, this diode can be easily integrated into various circuit configurations, improving design flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps minimize overall circuit board area, ideal for compact electronic devices.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures the diode can function effectively in demanding thermal environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability, ensuring reliable connections during assembly.

Terminal Position: DUAL

The dual terminal position facilitates easier layout and integration into various PCB designs.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time of 30 seconds at peak reflow temperature ensures compatibility with modern soldering techniques and processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures compatibility with a wide range of solder materials, enhancing assembly flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component effectively converts AC to DC, making it essential for power management solutions.

Maximum Forward Voltage (VF): 0.45 V

A low forward voltage drop of 0.45 V contributes to higher efficiency in power conversion applications.

Maximum Output Current: 0.2 A

A maximum output current of 0.2 A allows this diode to handle a moderate load, suitable for various small-signal applications.

Technology: SCHOTTKY

Utilizing Schottky technology offers faster switching speeds and lower voltage drop, enhancing overall performance.

Terminal Form: GULL WING

The gull wing terminal form provides excellent mechanical strength and stability, ensuring robust connections on the PCB.

No. of Elements: 2

Having two elements supports various circuit configurations, offering flexibility in power management schemes.

Maximum Repetitive Peak Reverse Voltage: 100 V

A maximum repetitive peak reverse voltage of 100 V enables the diode to operate in circuits with substantial voltage spikes.

Maximum Non Repetitive Peak Forward Current: 1 A

The ability to handle non-repetitive peak forward currents of 1 A allows for robust performance during surge conditions.

Diode Element Material: SILICON

The silicon diode element material provides excellent thermal stability and reliability for power applications.

Technical Specifications

Diodes & Rectifiers BAT41SWFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT41SWFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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