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BAT41JFILM

STMicroelectronics

BAT41JFILM by STMicroelectronics

BAT41JFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.45 V and supports up to 200 mA output current. It features a compact surface mount design in a rectangular package, ideal for space-constrained applications. Withstanding peak reflow temps of 260 °C, it ensures reliability in high-performance circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 461,420 parts In-Stock

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461,420

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Vyrian

USA . 7,598 parts In-Stock

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7,598

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Prism Electronics

USA . 6,000 parts In-Stock

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6,000

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Digiode

USA . 4,224 parts In-Stock

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4,224

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Anansix

USA . 2,185 parts In-Stock

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2,185

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,008 parts In-Stock

1+ parts

$0.017

100+ parts

-

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$0.015

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2,008

$0.017

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$0.015

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MKK Technologies

India . 1,535 parts In-Stock

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$0.031

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1,535

$0.031

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DigiPath Technology Company

USA . 1,535 parts In-Stock

1+ parts

$0.031

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1,535

$0.031

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AZTECH Wire

Italy . 504 parts In-Stock

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$19.490

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504

$19.490

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 44,590 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,983 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,287 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,191 parts In-Stock

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Corphita

USA . 4,011 parts In-Stock

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Northwest PG Solutions

USA . 2,029 parts In-Stock

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Parana Technologies

USA . 688 parts In-Stock

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$0.020

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688

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Native Components

USA . 564 parts In-Stock

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564

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Perfect Parts

USA . 129 parts In-Stock

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129

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Overview

Unlock superior performance with the BAT41JFILM from STMicroelectronics, a trusted leader in semiconductor innovation. This Schottky rectifier diode excels in efficiency and thermal management, making it ideal for applications like power supply circuits and automotive electronics. With its compact design and reliable operation at high temperatures, it delivers exceptional value and reliability that empower your projects to perform at their best. Choose STMicroelectronics for quality you can depend on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for a wide range of applications.

Config: SINGLE

A single diode configuration simplifies design and integration into circuits, allowing for easy assembly and reduced complexity.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of PCB space, ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape ensures efficient space utilization on PCBs, promoting better layout options for circuit designers.

No. of Terminals: 2

With only two terminals, this diode is straightforward to connect, minimizing potential soldering errors during assembly.

Package Style (Meter): SMALL OUTLINE

Small outline packages contribute to more compact circuit designs and are especially advantageous in space-constrained applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the diode to perform reliably in demanding thermal environments.

Terminal Finish: MATTE TIN

Matte tin finishes enhance solderability and corrosion resistance, ensuring reliable electrical connections over time.

Terminal Position: DUAL

Dual terminal positioning aids in ease of placement and alignment during the manufacturing process.

Maximum Time At Peak Reflow Temperature: 30s

A peak reflow time of 30 seconds minimizes thermal exposure for the diode, reducing the risk of thermal damage during assembly.

Peak Reflow Temperature: 260 °C

A high peak reflow temperature allows for compatibility with lead-free soldering processes, aligning with modern manufacturing practices.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification, this diode efficiently converts AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 0.45 V

A low forward voltage drop enhances efficiency in power circuits, reducing energy loss during operation.

Maximum Output Current: 0.2 A

Supports moderate current loads, making it suitable for a variety of low to mid-power applications.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds, which is crucial for high-frequency applications and improves overall efficiency.

Terminal Form: GULL WING

Gull wing terminals provide robust mechanical connections, ensuring stability and reliability in solder joints.

Maximum Repetitive Peak Reverse Voltage: 100 V

A high peak reverse voltage rating provides greater reliability in situations with fluctuating voltage conditions, preventing breakdown.

Maximum Non-Repetitive Peak Forward Current: 1 A

With the capability to handle brief spikes in forward current, this diode can withstand transient conditions without failure.

Diode Element Material: SILICON

Silicon as a diode element material provides good thermal stability and optimal electrical characteristics for reliable performance.

Technical Specifications

Diodes & Rectifiers BAT41JFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT41JFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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