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BAT41AWFILM

STMicroelectronics

BAT41AWFILM by STMicroelectronics

BAT41AWFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.45 V and supports up to 200 mA output current. It features a compact surface mount design in a rectangular package, ideal for space-constrained applications. Withstanding peak reflow temps of 260 °C, it's perfect for high-temp environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,507 parts In-Stock

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Anansix

USA . 1,957 parts In-Stock

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1,957

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Digiode

USA . 502 parts In-Stock

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502

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IDEA Electronic Components Group

UK . 670 parts In-Stock

1+ parts

$0.018

100+ parts

-

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$0.017

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670

$0.018

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$0.017

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MKK Technologies

India . 1,172 parts In-Stock

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$0.035

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1,172

$0.035

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DigiPath Technology Company

USA . 1,172 parts In-Stock

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$0.035

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1,172

$0.035

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AZTECH Wire

Italy . 370 parts In-Stock

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$14.740

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370

$14.740

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Native Components

USA . 347 parts In-Stock

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$31.270

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$30.019

347

$31.270

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$30.019

Northwest PG Solutions

USA . 448 parts In-Stock

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$34.397

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$34.397

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Assy Fe

Spain . 4,770 parts In-Stock

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Corphita

USA . 3,287 parts In-Stock

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Lixinc

USA . 1,379 parts In-Stock

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Parana Technologies

USA . 139 parts In-Stock

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$0.022

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Overview

Unlock superior reliability and performance with the BAT41AWFILM diode from STMicroelectronics. Crafted with precision, this Schottky rectifier diode ensures optimal efficiency in a compact design, perfect for modern electronics. Its robust construction and innovative technology make it ideal for diverse applications, enhancing your designs with low forward voltage and high-temperature tolerance. Trust in STMicroelectronics' legacy of excellence to elevate your projects and achieve lasting success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the body material provides excellent insulation and durability, ensuring reliable operation in various environments.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration allows for easy integration in circuits requiring multiple diodes, enhancing design flexibility.

Surface Mount: YES

Being a surface mount device (SMD) allows for compact PCB designs, facilitating high-density applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the PCB, making it suitable for tight design constraints.

No. of Terminals: 3

Three terminals facilitate versatile connections in circuit designs while maintaining simplicity.

Package Style (Meter): SMALL OUTLINE

Small outline packaging minimizes the footprint, making it ideal for portable and space-constrained applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can operate reliably in high-temperature environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and long-term stability during assembly and use.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility for circuit layout and improves thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering under peak reflow conditions without risking component damage.

Peak Reflow Temperature (°C): 260

A peak reflow temperature of 260 °C supports compatibility with modern soldering techniques, enhancing manufacturability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is ideal for converting AC to DC, making it suitable for a variety of applications.

Maximum Forward Voltage (VF): 0.45 V

The low forward voltage drop minimizes energy loss during operation, improving overall system efficiency.

Maximum Output Current: 0.2 A

With a maximum output current of 0.2 A, this diode can handle moderate load applications efficiently.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage, making it suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide enhanced mechanical stability and ease of soldering, ensuring reliable electrical connections.

No. of Elements: 2

Having 2 elements allows for versatile circuit configurations and enhanced performance in applications requiring redundancy.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a maximum reverse voltage of 100 V, this diode is capable of handling significant back voltage, ensuring reliability in various applications.

Maximum Non Repetitive Peak Forward Current: 1 A

The diode can withstand higher peak currents, offering protection and flexibility for transient conditions in circuit designs.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent thermal stability and efficiency, making it a standard choice in the industry.

Technical Specifications

Diodes & Rectifiers BAT41AWFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT41AWFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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