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BAR46A

STMicroelectronics

BAR46A by STMicroelectronics

BAR46A by STMicroelectronics is a Schottky rectifier diode with a max operating temp of 150 °C and supports up to 0.15 A output current. It features a common anode configuration in a small outline package, ideal for compact electronic applications. With a peak reverse voltage of 100 V, it ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,997 parts In-Stock

1+ parts

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2,997

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Vyrian

USA . 866 parts In-Stock

1+ parts

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866

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Anansix

USA . 539 parts In-Stock

1+ parts

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539

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 987 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

$0.119

987

$0.124

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$0.119

IDEA Electronic Components Group

UK . 2,364 parts In-Stock

1+ parts

$0.125

100+ parts

-

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$0.113

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2,364

$0.125

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$0.113

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Northwest PG Solutions

USA . 1,487 parts In-Stock

1+ parts

$0.136

100+ parts

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$0.120

1,487

$0.136

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$0.120

MKK Technologies

India . 1,568 parts In-Stock

1+ parts

$0.235

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1,568

$0.235

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DigiPath Technology Company

USA . 1,568 parts In-Stock

1+ parts

$0.235

100+ parts

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1,568

$0.235

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Andel Nordic

Denmark . 3,607 parts In-Stock

1+ parts

$14.160

100+ parts

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$9.913

10k+ parts

$9.913

3,607

$14.160

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$9.913

$9.913

Perfect Parts

USA . 2,336 parts In-Stock

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2,336

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Kepictronics

USA . 2,200 parts In-Stock

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2,200

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Cyclops Electronics Ltd (Excess)

UK . 1,043 parts In-Stock

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1,043

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Parana Technologies

USA . 918 parts In-Stock

1+ parts

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$0.150

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918

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$0.150

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Corphita

USA . 683 parts In-Stock

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683

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Overview

Unlock superior performance with the BAR46A from STMicroelectronics, a leader in semiconductor innovation. This high-quality Schottky rectifier diode offers exceptional reliability and efficiency, perfect for a wide range of applications—from power supplies to signal processing. Designed to withstand extreme temperatures and deliver consistent output, the BAR46A ensures your projects run smoothly, maximizing value and minimizing downtime. Experience the advantage of trusted engineering and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making this diode reliable in various applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration simplifies circuit design, allowing for easier integration into various electronic systems.

Surface Mount: YES

Being a surface mount component allows for higher density PCB designs, facilitating more compact and efficient electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, adapting well to various layouts and contributing to efficient design practices.

No. of Terminals: 3

Having three terminals provides versatility in circuit connections, enhancing the component's usability in different applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is preferred in modern electronics for its compact size, catering to the trend of miniaturization in devices.

Maximum Operating Temperature: 150 °C

A high operating temperature capability ensures reliable performance in demanding environments, making this diode suitable for diverse applications.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, this diode can perform in extreme cold conditions, expanding its range of applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, improving the long-term reliability of connections in applications.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in PCB design, allowing for effective layouts in various circuit configurations.

Maximum Power Dissipation: 0.23 W

The capability to dissipation power effectively contributes to the reliability and longevity of the diode in electronic circuits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for efficient voltage rectification, making it ideal for power conversion applications.

Maximum Forward Voltage (VF): 1 V

A low forward voltage drop enhances power efficiency by minimizing energy losses during operation, which is crucial for battery-powered devices.

Maximum Output Current: 0.15 A

This output current capacity makes it suitable for various consumer electronics and power management applications.

Technology: SCHOTTKY

Utilizing Schottky technology allows for faster switching speeds and reduced reverse recovery time, enhancing the overall performance of the diode.

Terminal Form: GULL WING

The gull wing terminal form is designed for optimal mechanical stability and ease of soldering, which is beneficial during assembly.

No. of Elements: 2

With two elements, this diode can effectively manage higher current loads, making it versatile for various applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

A high voltage capability allows the diode to be used in diverse high-voltage applications, increasing its market applicability.

Diode Element Material: SILICON

Silicon as the diode element material ensures robustness and reliability, which are essential for performance in electronic circuits.

Technical Specifications

Diodes & Rectifiers BAR46A attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.23 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR46A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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