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BAR42

STMicroelectronics

BAR42 by STMicroelectronics

BAR42 by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.65V and output current of 0.1A. It has a fast reverse recovery time of 0.005us and low reverse current of 0.5uA, making it ideal for high-speed switching applications in electronics. The diode operates b/w -40 to 150 °C, features a small outline package style, and can handle up to 30V peak reverse voltage and 0.75A peak forward current.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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R&J Components

USA . 3,000 parts In-Stock

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3,000

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ECAB

Sweden . 3,000 parts In-Stock

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3,000

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ABC Electronics Ltd.

UK . 3,000 parts In-Stock

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3,000

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PC Components Company LLC

USA . 2,820 parts In-Stock

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2,820

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Bristol Electronics

USA . 2,820 parts In-Stock

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2,820

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ComSIT Distribution GmbH

Germany . 2,800 parts In-Stock

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2,800

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Whistler Technology

UK . 2,319 parts In-Stock

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2,319

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Anansix

USA . 2,008 parts In-Stock

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Vyrian

USA . 1,545 parts In-Stock

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Digiode

USA . 1,266 parts In-Stock

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J2 Sourcing AB

Sweden . 683 parts In-Stock

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Resion

USA . 78 parts In-Stock

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IDEA Electronic Components Group

UK . 357 parts In-Stock

1+ parts

$0.104

100+ parts

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$0.094

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357

$0.104

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$0.094

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MKK Technologies

India . 91 parts In-Stock

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$0.195

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91

$0.195

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DigiPath Technology Company

USA . 91 parts In-Stock

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$0.195

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$0.195

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Native Components

USA . 749 parts In-Stock

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$1.810

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749

$1.810

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Northwest PG Solutions

USA . 1,505 parts In-Stock

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$1.991

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$1.991

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Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

USA . 16,834 parts In-Stock

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Corphita

USA . 4,119 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,250 parts In-Stock

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Parana Technologies

USA . 1,602 parts In-Stock

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$0.124

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$0.124

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Cyclops Electronics Ltd (Excess)

UK . 500 parts In-Stock

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Overview

Unleash the power of precision with the BAR42 by STMicroelectronics. Crafted with top-quality materials and cutting-edge technology, this Schottky rectifier diode offers unparalleled performance and reliability. Whether you're designing circuits for automotive applications, industrial equipment, or consumer electronics, the BAR42 delivers exceptional forward voltage and output current capabilities. Trust in STMicroelectronics' reputation for excellence and elevate your projects with the BAR42 diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this diode durable and reliable for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and reduces complexity in assembly.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on electronic circuit boards.

Maximum Reverse Recovery Time: 0.005 us

The fast reverse recovery time ensures efficient and responsive switching performance.

Maximum Reverse Current: 0.5 uA

Low reverse current helps in minimizing power losses and improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy placement and mounting within electronic systems.

No. of Terminals: 3

Having 3 terminals allows for proper connection and integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables compact designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range ensures reliable operation even in cold environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for secure connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit configurations and connections.

Maximum Power Dissipation: 0.25 W

The specified power dissipation rating ensures the diode can handle power efficiently without overheating.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is ideal for converting alternating current (AC) to direct current (DC) in various electronic applications.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop leads to minimal power losses and improved energy efficiency.

Maximum Output Current: 0.1 A

Capable of handling a maximum output current of 0.1 A, making it suitable for low-power applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them efficient for high-speed circuits.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and reliable connection for the diode in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a high repetitive peak reverse voltage rating, this diode can handle fluctuations in reverse voltage without breakdown.

Maximum Non Repetitive Peak Forward Current: 0.75 A

Capable of handling short-term peak currents without damage, ensuring reliability in transient conditions.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and durability in diode applications.

Technical Specifications

Diodes & Rectifiers BAR42 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FAST SWITCHING

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

.75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BAR42 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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