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1N992B

STMicroelectronics

1N992B by STMicroelectronics

1N992B Zener diode from STMicroelectronics features a nominal reference voltage of 200V, max power dissipation of 0.4W, and operates at a max temp of 175 °C. It's ideal for voltage regulation in various electronic applications. Its glass package ensures durability.

Median Price

$2.770

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 48 parts In-Stock

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$2.770

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48

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Vyrian

USA . 4,139 parts In-Stock

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Digiode

USA . 1,762 parts In-Stock

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Anansix

USA . 1,283 parts In-Stock

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1,283

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Electronic Expediters

USA . 134 parts In-Stock

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134

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LWI Electronics Inc

India . 31 parts In-Stock

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Electronics Depot

USA . 3 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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Elcom Components

USA . 2 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,372 parts In-Stock

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$0.070

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$0.063

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1,372

$0.070

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$0.063

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MKK Technologies

India . 2,378 parts In-Stock

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$0.131

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2,378

$0.131

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DigiPath Technology Company

USA . 2,378 parts In-Stock

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$0.131

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$0.131

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Native Components

USA . 773 parts In-Stock

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$24.950

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773

$24.950

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Northwest PG Solutions

USA . 1,586 parts In-Stock

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$27.445

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$24.701

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$27.445

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Microchip USA

USA . 4,267 parts In-Stock

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$28.812

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QUARKTWIN TECHNOLOGY LTD

USA . 24,677 parts In-Stock

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QualityLine Systems

Poland . 6,538 parts In-Stock

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Corphita

USA . 5,040 parts In-Stock

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Marpe Global Electronics

Taiwan . 3,830 parts In-Stock

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Supply Digital

USA . 2,243 parts In-Stock

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Parana Technologies

USA . 787 parts In-Stock

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$0.084

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787

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XL Components Corporation

Australia . 126 parts In-Stock

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RTC Component Inc.

USA . 1 parts In-Stock

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Overview

Unlock unparalleled reliability with the 1N992B Zener Diode from STMicroelectronics. Renowned for its exceptional quality, this diode delivers precise voltage regulation, making it ideal for power management in various applications such as automotive electronics and consumer devices. With a robust design and a temperature tolerance up to 175 °C, customers can trust the 1N992B to provide consistent performance and enhance the longevity of their systems. Choose STMicroelectronics for innovative solutions that elevate your projects!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides excellent thermal and electrical insulation, ensuring reliable performance in various applications.

Config: SINGLE

A single configuration allows for straightforward integration into circuits without complications from multiple components.

Working Test Current: 0.65 mA

This low working test current indicates that the diode operates efficiently, making it suitable for low-power applications.

Package Shape: ROUND

The round shape facilitates easy mounting and can reduce space in device design, enhancing overall efficiency.

No. of Terminals: 2

With only two terminals, installation and connections are simplified, making this diode user-friendly.

Package Style (Meter): LONG FORM

The long form package style is ideal for applications requiring flexibility in placement within electronic circuits.

Maximum Voltage Tolerance: 5 %

A tolerance of 5% ensures accurate voltage regulation, making it a reliable choice for precise electronic applications.

Maximum Operating Temperature: 175 °C

With a high operating temperature limit, this diode is suitable for use in harsh environments, enhancing operational reliability.

Maximum Dynamic Impedance: 2500 ohm

A low dynamic impedance allows the diode to respond quickly to voltage changes, making it effective in regulating circuits.

Terminal Finish: TIN LEAD

The tin-lead terminal finish ensures good solderability and reliable connections, which is essential for long-term performance.

Terminal Position: AXIAL

Axial terminal positioning contributes to ease of installation, particularly in traditional PCB layouts.

Case Connection: ISOLATED

The isolated case connection enhances safety by preventing unwanted current flow, making it a secure choice for sensitive applications.

Maximum Power Dissipation: 0.4 W

A power dissipation of 0.4 W indicates that this diode can handle adequate power levels for various applications without overheating.

Diode Type: ZENER DIODE

As a Zener diode, it maintains a stable reference voltage, making it ideal for voltage regulation and protection circuits.

Nominal Reference Voltage: 200 V

A nominal reference voltage of 200 V is suitable for high-voltage applications, offering versatility for various electronic components.

Technology: ZENER

Utilizing Zener technology ensures the diode provides good voltage stability under varying load conditions.

Terminal Form: WIRE

The wire terminal form facilitates easy connections in a wide array of applications, enhancing versatility.

Polarity: UNIDIRECTIONAL

A unidirectional polarity simplifies usage in most circuit designs, making this product a convenient choice for engineers.

Diode Element Material: SILICON

The use of silicon as the diode element material contributes to its reliability and performance efficiency in electronic applications.

Technical Specifications

Zener Diodes 1N992B attributes and parameters. Explore more Zener Diodes devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2500 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

200 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.65 mA

Trade Compliance

1N992B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-419-5359, 5961004195359, 5961-00-828-7481, 5961008287481, 5961-01-615-3440, 5961016153440

NIIN

004195359, 008287481, 016153440

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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