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FW812

Sanyo Semiconductor

FW812 by Sanyo Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 35 V; No. of Elements: 2; Transistor Element Material: SILICON;

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Digiode

USA . 1,654 parts In-Stock

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Vyrian

USA . 389 parts In-Stock

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Kulean Microsystems

USA . 5,862 parts In-Stock

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SupplyDigital Components

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Northwest PG Solutions

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Corphita

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

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Native Components

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Corohmni

South Africa . 73 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FW812 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Sanyo Semiconductor

Specs

Minimum DS Breakdown Voltage:

35 V

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.017 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

52 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FW812 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanyo Semiconductor

PHOENIX, Ariz. and TOKYO, Japan – Jan. 3, 2011 – ON Semiconductor Corporation (Nasdaq: ONNN) today announced the completion of the acquisition of SANYO Semiconductor Co., Ltd., a subsidiary of SANYO Electric, and other assets related to SANYO Electric’s semiconductor business, by ON Semiconductor. Under the terms of the purchase agreement, ON Semiconductor paid approximately ¥11.8 billion ($144 million) in cash to SANYO Electric and drew down approximately ¥31.7 billion ($378 million) under a loan agreement with SANYO Electric. “The combination with SANYO Semiconductor represents an important step in the continued transformation of ON Semiconductor into a premier global supplier of high-performance silicon solutions for energy efficient electronics,” said Keith Jackson, president and CEO of ON Semiconductor. “This acquisition enables us to expand wholeheartedly into the Japanese market and to capture growth on a global basis. We believe this acquisition will create immediate value for customers, partners and investors, and we are excited to welcome the employees of SANYO Semiconductor to the ON Semiconductor family.”

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