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UDN2916B

Sanken Electric

UDN2916B by Sanken Electric

STEPPER MOTOR CONTROLLER; Temperature Grade: OTHER; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Median Price

$10.830

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TEDSS.com

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AZTECH Wire

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Technical Specifications

Motion Control ICs UDN2916B attributes and parameters. Explore more Motion Control ICs devices from Sanken Electric

Specs

Other IC type:

JESD-30 Code:

R-PDIP-T24

Length:

30.45 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

UDN2916B Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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