Loading...

SDURF3030CT

Sangdest Microelectronics (Nanjing)

SDURF3030CT by Sangdest Microelectronics (Nanjing)

SDURF3030CT by Sangdest Microelectronics is a common cathode diode with 0.045 us reverse recovery time and 10 uA reverse current. Ideal for ultra-fast recovery applications, it has a max output current of 15 A, forward voltage of 1.25 V, and can handle up to 300 V peak reverse voltage.

Median Price

$1.800

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 17,599 parts In-Stock

1+ parts

$1.800

100+ parts

$0.761

1k+ parts

$0.548

10k+ parts

$0.427

17,599

$1.800

$0.761

$0.548

$0.427

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$0.540

-

-

-

Vyrian

USA . 17,324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,324

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.097

100+ parts

$0.088

1k+ parts

$0.080

10k+ parts

-

100

$0.097

$0.088

$0.080

-

Bastille Electronics

Australia . 4,008 parts In-Stock

1+ parts

$0.540

100+ parts

$0.513

1k+ parts

$0.487

10k+ parts

$0.481

4,008

$0.540

$0.513

$0.487

$0.481

Continental Prestige Electronics

USA . 612 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

$0.529

612

$0.540

-

-

$0.529

Argo Parts USA

USA . 173 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

$0.524

173

$0.540

-

-

$0.524

Microchip USA

USA . 4,936 parts In-Stock

1+ parts

$7.215

100+ parts

-

1k+ parts

-

10k+ parts

-

4,936

$7.215

-

-

-

Overview

Experience ultra-fast recovery and superior performance with the SDURF3030CT by Sangdest Microelectronics (Nanjing). As a leading manufacturer in diodes & rectifiers, Sangdest offers top-quality products for various applications. With a maximum output current of 15A and a maximum reverse recovery time of 0.045 us, this common cathode diode provides unmatched reliability and efficiency. Trust Sangdest to deliver exceptional value and benefits, ensuring that your electronic devices operate at their best. Upgrade to the SDURF3030CT today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the diode lightweight and resistant to environmental factors, ensuring durability and longevity.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and ease of circuit integration.

Maximum Reverse Recovery Time: 0.045 us

Ultra fast reverse recovery time ensures quick switching and high efficiency in the diode operation.

Maximum Reverse Current: 10 uA

Low reverse current reduces power loss and improves overall performance of the diode.

Package Shape: RECTANGULAR

Rectangular shape offers easy mounting and space-saving design for better integration in circuit boards.

No. of Terminals: 3

3 terminals provide convenient connectivity and flexibility in circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style makes it easy to secure the diode in place and ensures stability during operation.

Application: ULTRA FAST RECOVERY

Designed for ultra fast recovery applications, suitable for high-speed switching circuits and power supplies.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a variety of environments.

Minimum Operating Temperature: -55 °C

Wide range of minimum operating temperature ensures functionality in extreme cold conditions.

Terminal Position: SINGLE

Single terminal position simplifies installation and minimizes the chances of wiring errors.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents electrical interference in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diode type suitable for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop of 1.25 V reduces power dissipation and improves efficiency in the circuit.

Maximum Output Current: 15 A

High output current rating of 15 A allows for handling large loads and power requirements.

Terminal Form: THROUGH-HOLE

Through-hole terminal form facilitates easy soldering and secure connection on circuit boards.

No. of Elements: 2

2 diode elements in the package provide redundancy and improve reliability in the circuit.

Maximum Repetitive Peak Reverse Voltage: 300 V

High repetitive peak reverse voltage rating of 300 V makes it suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 110 A

High non-repetitive peak forward current rating of 110 A allows for handling short-duration overloads.

Diode Element Material: SILICON

Silicon material for diode elements offers reliable performance and high temperature tolerance for various applications.

Technical Specifications

Diodes & Rectifiers SDURF3030CT attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE, SNUBBER DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.045 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SDURF3030CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20