Loading...

S3D20065D

Sangdest Microelectronics (Nanjing)

S3D20065D by Sangdest Microelectronics (Nanjing)

S3D20065D by Sangdest Microelectronics is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 650V. It has a max output current of 31A and is ideal for high voltage power applications. With a package style of flange mount and max power dissipation of 103W, it operates b/w -55°C to 175°C.

Median Price

$4.654

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 78 parts In-Stock

1+ parts

$3.869

100+ parts

-

1k+ parts

-

10k+ parts

-

78

$3.869

-

-

-

TME

Poland . 50 parts In-Stock

1+ parts

$5.440

100+ parts

$4.390

1k+ parts

$3.950

10k+ parts

-

50

$5.440

$4.390

$3.950

-

Vyrian

USA . 7,829 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,829

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,600 parts In-Stock

1+ parts

$3.869

100+ parts

-

1k+ parts

-

10k+ parts

$3.791

4,600

$3.869

-

-

$3.791

Argo Parts USA

USA . 2,593 parts In-Stock

1+ parts

$3.869

100+ parts

-

1k+ parts

-

10k+ parts

-

2,593

$3.869

-

-

-

Bastille Electronics

Australia . 1,179 parts In-Stock

1+ parts

$3.869

100+ parts

$3.676

1k+ parts

$3.492

10k+ parts

$3.443

1,179

$3.869

$3.676

$3.492

$3.443

Semicontronic

India . 536 parts In-Stock

1+ parts

$5.190

100+ parts

$5.060

1k+ parts

$5.034

10k+ parts

-

536

$5.190

$5.060

$5.034

-

AZTECH Wire

Italy . 260 parts In-Stock

1+ parts

$13.721

100+ parts

-

1k+ parts

-

10k+ parts

-

260

$13.721

-

-

-

Microchip USA

USA . 3,838 parts In-Stock

1+ parts

$17.700

100+ parts

$17.440

1k+ parts

$17.320

10k+ parts

$17.190

3,838

$17.700

$17.440

$17.320

$17.190

Overview

Discover the power of Sangdest Microelectronics (Nanjing) with the S3D20065D diode & rectifier. With a maximum reverse test voltage of 650V and a maximum output current of 31A, this common cathode, 2-element diode is perfect for high voltage power applications. The quality craftsmanship and cutting-edge technology of Sangdest Microelectronics guarantee top-notch performance and reliability. Experience the benefits of superior power dissipation, efficient operation, and long-lasting durability with the S3D20065D. Take your projects to new heights with this innovative diode solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes and rectifiers, making them suitable for various applications.

Maximum Reverse Current: 40 uA

Low reverse current ensures efficient performance and minimal power loss.

Application: HIGH VOLTAGE POWER

Designed specifically for high voltage power applications, ensuring reliable and stable operation in such scenarios.

Maximum Forward Voltage (VF): 1.7 V

Low forward voltage drop helps in minimizing power loss and improving efficiency.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them ideal for high frequency and high efficiency applications.

Maximum Operating Temperature: 175 °C

Higher operating temperature range allows for operation in a wider range of environments without compromising performance.

Technical Specifications

Diodes & Rectifiers S3D20065D attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE POWER

Minimum Breakdown Voltage:

650 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

115 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

31 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

103 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

S3D20065D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4