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MBR30200WT

Sangdest Microelectronics (Nanjing)

MBR30200WT by Sangdest Microelectronics (Nanjing)

MBR30200WT by Sangdest Microelectronics is a Schottky rectifier diode with 200V peak reverse voltage and 1.05V forward voltage, ideal for applications requiring high current handling capabilities up to 150A. With a temperature range of -55°C to 150°C, it features a common cathode configuration in a rectangular package suitable for flange mounting.

Median Price

$2.690

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

1+ parts

$2.690

100+ parts

$1.190

1k+ parts

$0.883

10k+ parts

$0.787

20

$2.690

$1.190

$0.883

$0.787

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,416

-

-

-

-

Nova Conductors

Japan . 97 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

97

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 312 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

312

$0.130

-

-

-

Corohmni

South Africa . 816 parts In-Stock

1+ parts

$1.005

100+ parts

-

1k+ parts

-

10k+ parts

-

816

$1.005

-

-

-

Semicontronic

India . 93 parts In-Stock

1+ parts

$1.600

100+ parts

$1.560

1k+ parts

$1.552

10k+ parts

-

93

$1.600

$1.560

$1.552

-

Microchip USA

USA . 7,577 parts In-Stock

1+ parts

$12.415

100+ parts

-

1k+ parts

-

10k+ parts

-

7,577

$12.415

-

-

-

AZTECH Wire

Italy . 744 parts In-Stock

1+ parts

$12.551

100+ parts

-

1k+ parts

-

10k+ parts

-

744

$12.551

-

-

-

Continental Prestige Electronics

USA . 4,713 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,713

-

-

-

-

Argo Parts USA

USA . 1,233 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,233

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

iodParts Technologies Inc.

India . 125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

125

-

-

-

-

Overview

Enhance your electronics projects with the MBR30200WT diode by Sangdest Microelectronics (Nanjing). Known for their top-tier quality and cutting-edge technology, Sangdest Microelectronics delivers reliable and efficient components. The MBR30200WT, a Schottky rectifier diode with a maximum reverse voltage of 200V and a maximum forward voltage of 1.05V, is a must-have for any DIY enthusiast or professional technician. Say goodbye to performance issues and hello to seamless operation with this high-performance diode. Upgrade your projects today with Sangdest Microelectronics' MBR30200WT!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diodes, ensuring long-term reliability and durability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and integration. Having 2 elements provides redundancy and higher efficiency.

Maximum Reverse Current: 1000 uA

Low reverse current ensures minimal power loss and improved performance in applications requiring low leakage current.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy installation and secure mounting, making it suitable for various industrial applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in demanding environments with elevated temperatures.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop results in improved efficiency and reduced power dissipation, making it energy-efficient.

Technology: SCHOTTKY

Schottky diodes offer faster switching speeds and lower forward voltage drop compared to standard diodes, enhancing performance in high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating provides protection against voltage spikes and surges, making it suitable for voltage regulation and transient suppression.

Maximum Non Repetitive Peak Forward Current: 150 A

High peak forward current capability allows for handling sudden surge currents, ideal for applications with varying load conditions.

Technical Specifications

Diodes & Rectifiers MBR30200WT attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1000 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MBR30200WT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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