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MBR30100CTP

Sangdest Microelectronics (Nanjing)

MBR30100CTP by Sangdest Microelectronics (Nanjing)

MBR30100CTP by Sangdest Microelectronics is a Schottky rectifier diode with 2 elements in common cathode configuration. It has a max reverse current of 1000uA and can handle up to 150A non-repetitive peak forward current. Ideal for applications requiring high efficiency and low forward voltage drop.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.440

-

-

-

Vyrian

USA . 7,450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,450

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,888 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

10k+ parts

$0.431

2,888

$0.440

-

-

$0.431

Argo Parts USA

USA . 805 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

10k+ parts

$0.427

805

$0.440

-

-

$0.427

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.440

-

-

-

Microchip USA

USA . 2,639 parts In-Stock

1+ parts

$6.305

100+ parts

-

1k+ parts

-

10k+ parts

-

2,639

$6.305

-

-

-

AZTECH Wire

Italy . 222 parts In-Stock

1+ parts

$13.906

100+ parts

-

1k+ parts

-

10k+ parts

-

222

$13.906

-

-

-

Overview

Enhance the performance of your electronic devices with the MBR30100CTP diode by Sangdest Microelectronics (Nanjing). Crafted with top-notch materials and cutting-edge technology, this rectifier diode offers unparalleled quality and reliability. Whether you're working on power supplies, converters, or battery chargers, this diode's common cathode configuration and Schottky technology ensure efficient operation and optimal voltage control. Trust Sangdest Microelectronics to deliver products that exceed expectations and elevate your projects to new heights. Choose the MBR30100CTP for superior performance and lasting value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, ensuring longevity and reliability in various operating conditions.

Configuration: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit integration and 2 elements provide versatility in design and function.

Maximum Reverse Current: 1000 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic systems.

No. of Terminals: 3

Having 3 terminals provides flexibility in connection options and ease of installation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and efficient heat dissipation during operation.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures the diodes can withstand demanding environments without performance degradation.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature makes this product suitable for a wide range of applications, even in cold environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it user-friendly.

Case Connection: CATHODE

Cathode case connection allows for easy identification and proper orientation of the diodes in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential components in converting AC to DC, making this product ideal for various power supply applications.

Maximum Forward Voltage (VF): 0.85 V

Low forward voltage drop ensures efficient power conversion and minimal energy loss during operation.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop, making these diodes suitable for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy soldering and reliable connection in electronic circuits.

No. of Elements: 2

Having 2 elements provides redundancy and reliability in the circuit design, ensuring continuous operation even if one element fails.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage rating allows for safe operation in circuits with varying voltage levels without damage to the diodes.

Maximum Non Repetitive Peak Forward Current: 150 A

High non-repetitive peak forward current rating makes these diodes suitable for handling sudden surges in current without failure.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and reliability in various temperature conditions.

Technical Specifications

Diodes & Rectifiers MBR30100CTP attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1000 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MBR30100CTP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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